Halliday/Resnick/Walker Fundamentals of Physics 8 th edition

1. Halliday/Resnick/WalkerFundamentals of Physics 8th edition • Classroom Response System Questions Chapter 41 Conduction of Electricity in Solids Reading Quiz Questions

2. 41.2.1. How are atoms in a crystalline solid arranged? a) in a manner that results in the solid being transparent b) in a pattern that results in the lowest energy state c) in a repetitive three-dimensional structure d) on a lattice in which all of the magnetic spins are aligned e) randomly

3. 41.2.1. How are atoms in a crystalline solid arranged? a) in a manner that results in the solid being transparent b) in a pattern that results in the lowest energy state c) in a repetitive three-dimensional structure d) on a lattice in which all of the magnetic spins are aligned e) randomly

4. 41.2.2. Which of the following basic properties is not used to classify solids electrically? a) temperature coefficient of resistivity b) coefficient of restitution c) resistivity d) number density of charge carriers e) All of the above properties are used to classify solids electrically.

5. 41.2.2. Which of the following basic properties is not used to classify solids electrically? a) temperature coefficient of resistivity b) coefficient of restitution c) resistivity d) number density of charge carriers e) All of the above properties are used to classify solids electrically.

6. 41.2.3. Which of the following best describes the arrangement of atoms in a copper crystal? a) spherical b) cubic c) disordered d) one-dimensional e) Copper is a metal. It is not a crystal.

7. 41.2.3. Which of the following best describes the arrangement of atoms in a copper crystal? a) spherical b) cubic c) disordered d) one-dimensional e) Copper is a metal. It is not a crystal.

8. 41.3.1. In the discussion of the electrical properties of solid materials, what is a band? a) a collection of closely-spaced energy levels b) a linear defect in the lattice of the solid c) the paths electrons follow when moving in the solid d) lines of atoms in the lattice of the solid e) the class of electrical materials the solid falls into, such as metal, semiconductor, etc.

9. 41.3.1. In the discussion of the electrical properties of solid materials, what is a band? a) a collection of closely-spaced energy levels b) a linear defect in the lattice of the solid c) the paths electrons follow when moving in the solid d) lines of atoms in the lattice of the solid e) the class of electrical materials the solid falls into, such as metal, semiconductor, etc.

10. 41.3.2. Two nickel atoms, each containing 28 electrons, are brought close enough together to form a two-atom system. How many quantum states are available to electrons in this system? a) 40 b) 28 c) 14 d) 56 e) 2

11. 41.3.2. Two nickel atoms, each containing 28 electrons, are brought close enough together to form a two-atom system. How many quantum states are available to electrons in this system? a) 40 b) 28 c) 14 d) 56 e) 2

12. 41.3.3. In crystalline solids, there are bands of energy in which there are available states for electrons to occupy. What do we call the range of energies in between these bands for which there are no available states? a) illegal states b) breaches c) skips d) pauses e) gaps

13. 41.3.3. In crystalline solids, there are bands of energy in which there are available states for electrons to occupy. What do we call the range of energies in between these bands for which there are no available states? a) illegal states b) breaches c) skips d) pauses e) gaps

14. 41.4.1. Complete the following sentence: an electric insulator has a) the ability to easily conduct electricity, but does not easily conduct heat. b) few electrons available to conduct electricity. c) the ability to easily conduct electricity and heat. d) no ability to conduct electricity. e) many free electrons available to conduct electricity.

15. 41.4.1. Complete the following sentence: an electric insulator has a) the ability to easily conduct electricity, but does not easily conduct heat. b) few electrons available to conduct electricity. c) the ability to easily conduct electricity and heat. d) no ability to conduct electricity. e) many free electrons available to conduct electricity.

16. 41.4.2. Which of the following terms is used to describe a material that does not allow electrons to easily move through it? a) conductor b) resistor c) insulator d) transformer e) inductor

17. 41.4.2. Which of the following terms is used to describe a material that does not allow electrons to easily move through it? a) conductor b) resistor c) insulator d) transformer e) inductor

18. 41.5.1. What is the Fermi energy? a) 13.1 eV b) the width of the largest band in the solid c) the energy needed to initiate a current in a metal d) the average total energy of the electrons within the solid e) the highest occupied energy level of a solid when its at absolute zero

19. 41.5.1. What is the Fermi energy? a) 13.1 eV b) the width of the largest band in the solid c) the energy needed to initiate a current in a metal d) the average total energy of the electrons within the solid e) the highest occupied energy level of a solid when its at absolute zero

20. 41.5.2. Which one of the following statements concerning electrical conductors is false? a) Rubber is an excellent electrical conductor. b) A material that is a good electrical conductor has many free electrons that can easily move around inside the material. c) When a positively-charged object is moved into contact with an electrical conductor, electrons move toward the object. d) Materials that are good thermal conductors are often good electrical conductors. e) Most metals are very good electrical conductors.

21. 41.5.2. Which one of the following statements concerning electrical conductors is false? a) Rubber is an excellent electrical conductor. b) A material that is a good electrical conductor has many free electrons that can easily move around inside the material. c) When a positively-charged object is moved into contact with an electrical conductor, electrons move toward the object. d) Materials that are good thermal conductors are often good electrical conductors. e) Most metals are very good electrical conductors.

22. 41.5.3. What is the name of the microscopic model that may be used to understand why some materials are metals? a) comprehensive model b) Maxwell-Boltzmann model c) standard model d) Anderson model e) free-electron model

23. 41.5.3. What is the name of the microscopic model that may be used to understand why some materials are metals? a) comprehensive model b) Maxwell-Boltzmann model c) standard model d) Anderson model e) free-electron model

24. 41.5.4. To determine how many states in a given volume have energies between E and E + dE, we calculate N(E) dE. What is the name given to N(E)? a) energy density b) system quantifier c) density of states d) electron density function e) Maxwell-Boltzmann function

25. 41.5.4. To determine how many states in a given volume have energies between E and E + dE, we calculate N(E) dE. What is the name given to N(E)? a) energy density b) system quantifier c) density of states d) electron density function e) Maxwell-Boltzmann function

26. 41.5.5. If we wish to calculate the occupancy probability for electrons in metals, what type of statistics would we use? a) Bose - Einstein b) Fermi - Dirac c) Stern - Gerlach d) Gell-Mann - Feynman e) Abrikosov

27. 41.5.5. If we wish to calculate the occupancy probability for electrons in metals, what type of statistics would we use? a) Fermi - Dirac b) Bose - Einstein c) Stern - Gerlach d) Gell-Mann - Feynman e) Abrikosov

28. 41.5.6. At absolute zero, electrons occupy energy levels up to a certain energy. Which famous physicist is this energy named after? a) Feynman b) Bohr c) Maxwell d) Einstein e) Fermi

29. 41.5.6. At absolute zero, electrons occupy energy levels up to a certain energy. Which famous physicist is this energy named after? a) Feynman b) Bohr c) Maxwell d) Einstein e) Fermi

30. 41.6.1. The band structure of a semiconductor most closely resembles that of which of the following choices? a) superconductor b) insulator c) Einstein solid d) quantum dot e) metal

31. 41.6.1. The band structure of a semiconductor most closely resembles that of which of the following choices? a) superconductor b) insulator c) Einstein solid d) quantum dot e) metal

32. 41.6.2. Of the many parameters we come across in physics, resistivity is one which shows one of the largest variations, depending on the materials. The text indicates that the resistivity of copper is a very large factor smaller than that for silicon. What is that factor? a) 108 b) 1011 c) 1015 d) 1020 e) 1027

33. 41.6.2. Of the many parameters we come across in physics, resistivity is one which shows one of the largest variations, depending on the materials. The text indicates that the resistivity of copper is a very large factor smaller than that for silicon. What is that factor? a) 108 b) 1011 c) 1015 d) 1020 e) 1027

34. 41.7.1. Which of the following statements best describes an n-type semiconductor? a) An n-type semiconductor is one in its natural, undoped state. b) An n-type semiconductor has more holes in the conduction band than in its valence band. c) An n-type semiconductor has more electrons in the conduction band than holes in its valence band. d) An n-type semiconductor has more electrons in the valence band than in its conduction band. e) An n-type semiconductor has more holes in the valence band than electrons in its conduction band.

35. 41.7.1. Which of the following statements best describes an n-type semiconductor? a) An n-type semiconductor is one in its natural, undoped state. b) An n-type semiconductor has more holes in the conduction band than in its valence band. c) An n-type semiconductor has more electrons in the conduction band than holes in its valence band. d) An n-type semiconductor has more electrons in the valence band than in its conduction band. e) An n-type semiconductor has more holes in the valence band than electrons in its conduction band.

36. 41.7.2. Which of the following statements best describes a p-type semiconductor? a) A p-type semiconductor is one in its pure, undoped state. b) A p-type semiconductor has more holes in the conduction band than in its valence band. c) A p-type semiconductor has more electrons in the conduction band than holes in its valence band. d) A p-type semiconductor has more electrons in the valence band than in its conduction band. e) A p-type semiconductor has more holes in the valence band than electrons in its conduction band.

37. 41.7.2. Which of the following statements best describes a p-type semiconductor? a) A p-type semiconductor is one in its pure, undoped state. b) A p-type semiconductor has more holes in the conduction band than in its valence band. c) A p-type semiconductor has more electrons in the conduction band than holes in its valence band. d) A p-type semiconductor has more electrons in the valence band than in its conduction band. e) A p-type semiconductor has more holes in the valence band than electrons in its conduction band.

38. 41.7.3. What is the process of adding impurity atoms to a semiconducting material called? a) flopping b) charging c) doping d) whipping e) amplifying

39. 41.7.3. What is the process of adding impurity atoms to a semiconducting material called? a) flopping b) charging c) doping d) whipping e) amplifying

40. 41.7.4. What type of semiconductor is made by adding impurity atoms that contribute mobile electrons? a) a-type b) f-type c) m-type d) n-type e) p-type

41. 41.7.4. What type of semiconductor is made by adding impurity atoms that contribute mobile electrons? a) a-type b) f-type c) m-type d) n-type e) p-type

42. 41.7.5. What type of semiconductor is made by adding impurity atoms that contribute mobile positive holes? a) a-type b) f-type c) m-type d) n-type e) p-type

43. 41.7.5. What type of semiconductor is made by adding impurity atoms that contribute mobile positive holes? a) a-type b) f-type c) m-type d) n-type e) p-type

44. 41.8.1. What is the name given to the part of a pn-junction that is relatively free of mobile charge carriers? a) space charge region b) depletion zone c) diffusion locality d) singularity e) neutral zone

45. 41.8.1. What is the name given to the part of a pn-junction that is relatively free of mobile charge carriers? a) space charge region b) depletion zone c) diffusion locality d) singularity e) neutral zone

46. 41.9.1. Consider a pn-junction that is forward biased. What effect, if any, does the forward bias have on the potential barrier between the two sides of the junction? a) The barrier increases. b) The barrier decreases, but is still present. c) The barrier remains unchanged. d) The barrier disappears. e) The barrier causes the side that was n-type to become p-type and the side that was ­p­-type to become n-type, effectively reversing the polarity of the junction.

47. 41.9.1. Consider a pn-junction that is forward biased. What effect, if any, does the forward bias have on the potential barrier between the two sides of the junction? a) The barrier increases. b) The barrier decreases, but is still present. c) The barrier remains unchanged. d) The barrier disappears. e) The barrier causes the side that was n-type to become p-type and the side that was ­p­-type to become n-type, effectively reversing the polarity of the junction.

48. 41.9.2. Which of the following terms is used to describe a ­pn-junction in which the p-side becomes more negative and the n-side becomes more positive? a) forward-biased b) doped c) rectified d) back-biased e) rarefied

49. 41.9.2. Which of the following terms is used to describe a ­pn-junction in which the p-side becomes more negative and the n-side becomes more positive? a) forward-biased b) doped c) rectified d) back-biased e) rarefied

50. 41.9.3. Consider a pn-junction that is back biased. What effect, if any, does the back bias have on the potential barrier between the two sides of the junction? a) The barrier increases. b) The barrier decreases, but is still present. c) The barrier remains unchanged. d) The barrier disappears. e) The barrier causes the side that was n-type to become p-type and the side that was ­p­-type to become n-type, effectively reversing the polarity of the junction.