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ECE 875: Electronic Devices

This lecture discusses various types of sensors including chemical ion sensors, temperature sensors, and mechanical sensors. Topics covered include the dipole layer on the solution side, incorporating changes in sensor design, strain gauges, and factors affecting strain and resistance.

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ECE 875: Electronic Devices

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  1. ECE 875:Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

  2. Lecture 42, 23 Apr 14 • Chp 14: Sensors • Chemical ion sensors • Temperature sensors • Mechanical sensors VM Ayres, ECE875, S14

  3. Dipole layer on solution side + + + + + + _ _ _ _ _ _ + + + + + + So dominated by effect of dipole layer  missing the - Qf/Cox term in VFB “talks” to semiconductor at its insulator surface VM Ayres, ECE875, S14

  4. How to incorporate the changes: replacing metal gate with ion-rich solution: VM Ayres, ECE875, S14

  5. Main question is: find IDsat Hidden question is: find VT <= find VFB <= find fs ✔ ✔ ✔ VM Ayres, ECE875, S14

  6. Electron affinity: qc, Sze Appendix G EC – EF: Chp. 01, Eq’n (21) VM Ayres, ECE875, S14

  7. Lecture 42, 23 Apr 14 • Chp 14: Sensors • Chemical ion sensors • Temperature sensors • Mechanical sensors VM Ayres, ECE875, S14

  8. Semiconductor strain gauge: Readout: DR/R VM Ayres, ECE875, S14

  9. Strain S = f(R) VM Ayres, ECE875, S14

  10. Strain S  resistance R: VM Ayres, ECE875, S14

  11. Find Dl : VM Ayres, ECE875, S14

  12. Find Dl : VM Ayres, ECE875, S14

  13. Strain S  resistance R: VM Ayres, ECE875, S14

  14. Focus on DR/R: VM Ayres, ECE875, S14

  15. Focus on DArea/Area / Dl /l : VM Ayres, ECE875, S14

  16. Focus on DArea/Area / Dl /l : VM Ayres, ECE875, S14

  17. Focus on Dr/r / Dl /l : Cp: “longitudinal piezoresistive coefficient” VM Ayres, ECE875, S14

  18. Therefore: Strain S  resistance R: gauge factor G: VM Ayres, ECE875, S14

  19. Factors: Young’s modulus Y, Poisson’s ratio n and gauge factor G: Fig. 5, Chp. 14: For Si G = function (T) G is a pure #, no units VM Ayres, ECE875, S14

  20. Factors: Young’s modulus Y, Poisson’s ratio n and gauge factor G: In Sze Appendix G for Si and GaAs: Young’s modulus Y: units: pressure: GPa = force/area VM Ayres, ECE875, S14

  21. Factors: Young’s modulus Y, Poisson’s ratio n and gauge factor G: In Ioffe: Poisson’s ratio n: n is a pure #, no units For HW 09: match the Poisson’s ratio n value to the Sze Appendix G Young’s modulus VM Ayres, ECE875, S14

  22. Find what (including its symbol): VM Ayres, ECE875, S14

  23. Find what (including its symbol): Longitudinal piezoresistive coefficient Cp In Si @ 25oC = room temperature = 298 K ≈ 300 K Doping = 1020 cm-3 VM Ayres, ECE875, S14

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