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Nanorod monolayer Solvent evaporation technique (liquid-air interface)

Idea. 1. Azimuthal alignment of self-assembled nanorods. Nanorod monolayer Solvent evaporation technique (liquid-air interface). Nanorod dispersion b/w l/l interface Organic/ aqeuous interface ↓ Organic/LC interface. Idea. Liquid crystal. Substrate.

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Nanorod monolayer Solvent evaporation technique (liquid-air interface)

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  1. Idea 1. Azimuthal alignment of self-assembled nanorods Nanorod monolayer Solvent evaporation technique (liquid-air interface) Nanorod dispersion b/w l/l interface Organic/aqeuous interface ↓ Organic/LC interface

  2. Idea Liquid crystal Substrate Electric or magnetic field Flip & transfer Freeze & LC remove Immiscible solvent Immiscible solvent l/l interface: gives nanorod rotational freedom Liquid crystal assists azimuthal nanorod align

  3. Idea 2. Magnetic field-driven in-plane switching of nonmagnetic nanorod array Magnetic actuation of nanorod Magnetic nanorod (polymer/magnetite composite) Limitation : only magnetic material

  4. Idea Actuation of nonmagnetic nanorod by magnetic field (Nanorod/ferrofluid mixture) Nanorods are nonmagnetic, but ferrofluid enables nanorod aligning Applying close-packed nanorods on magnetic grid (with ferrofluid) => Collective controled motion (in-plane switching) of nanorod array

  5. Idea 3. Field-driven actuation of self-assembled nanorod array Disordered leaning of tapered nanorods (Free volume by taper) Electrical charges on nanorods = nanorods repels each other and be vertically ordered Substrate Substrate Electric field

  6. Idea 4. Gigabit memory device with self-assembled nanorod array Vertically aligned NWs or NRs Unique properties: Ordered crystal orientation High aspect ratio Etc. Nanorod devices DSSC, Piezoelectric, FE devices are capacitor-configuration devices (MSM or MIM) - Device fabrication is easier

  7. Idea ZnOnanorods for resistive memory Low voltage operation Device structure: Pt ZnO NR (Hydrothermal) >100 cycles endurance ITO >1000 sec retention

  8. Idea Self-assembled nanorods for memory application Advantages: Ultra-high density :1010 bits/mm2 (Lithography-free) Reliable nanorod isolation High density is realized by Uniform & narrow diameter of NRs Device fabrication: Transfer & metallization Ag paste Substrate Substrate

  9. Idea Device characterization CAFM measurement - Purely individual nanorod characterization Vertically aligned nanorods for Gigabit memory application

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