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0.1um T-Gate Technology (By EBMF-10.5)

0.1um T-Gate Technology (By EBMF-10.5). Kim Dae-Hyun 2002 / 7 / 9. Problem for Conv. Gate Process. - PMMA-650K 를 이용한 0.1um T-Gate 정의 -. PMMA650k. SiN. Dose=3nC/cm. Dose=4nC/cm. - Under Dose Cond. for single coating. - Foot Dose 에 관계없이 선폭 정의. - But, 0.25um line definition.

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0.1um T-Gate Technology (By EBMF-10.5)

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  1. 0.1um T-Gate Technology (By EBMF-10.5) Kim Dae-Hyun 2002 / 7 / 9 7월 둘째주

  2. Problem for Conv. Gate Process - PMMA-650K를 이용한 0.1um T-Gate 정의 - PMMA650k SiN Dose=3nC/cm Dose=4nC/cm - Under Dose Cond. for single coating - Foot Dose에 관계없이 선폭 정의 - But, 0.25um line definition => Head Exp.시 Bottom PMMA-650K 에너지 전달에 기인함. 7월 둘째주

  3. Introduction to Modified T-Gate Tech. • Pre-passivated SiN • Reducing Back-scattering < Reversed Double Exp. & Double Dev. > • Bottom PMMA Thick. • Affecting minimum line length • Parasitic Capacitance • f (PMMA, SiNx, etc) • Experiment Variables • SiN Thick., Dose, PMMA Thick. • Bottom Copolymer (Next) 7월 둘째주

  4. Initial Experiment Results - PMMA=1000A / SiN=1500A & Head Dose Split - Dose=30uC/cm2 Dose=40uC/cm2 PMMA=450A Dose=50uC/cm2 Dose=50uC/cm2 7월 둘째주

  5. Lg vs. 200A of SiN Dose=3.75nC/cm Dose=4.0nC/cm Dose=4.25nC/cm Dose=4.5nC/cm => Lg = 90 ~ 100nm on 200A SiNx Dielectric 7월 둘째주

  6. Process Optimization Trade-off : Lg & (PMMA+SiN) => PMMA-650k(Initial 1000A) / SiN Etch (10% Over-etch) 7월 둘째주

  7. PMMA & Copolymer Thick. Vs RPM Lg = 80nm Dose=3.75nC/cm 830A of PMMA 7월 둘째주

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