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Hamburg University: Plans for SLHC Silicon Detector R&D Georg Steinbrück

Hamburg University: Plans for SLHC Silicon Detector R&D Georg Steinbrück. Wien Feb 20, 2008. Plans for SLHC Silicon Detector R&D. Projects and collaborations of the group Strategies Measurements of material properties Sensor simulation/optimization Simulation of detector performance.

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Hamburg University: Plans for SLHC Silicon Detector R&D Georg Steinbrück

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  1. Hamburg University:Plans for SLHC Silicon Detector R&DGeorg Steinbrück Wien Feb 20, 2008

  2. Plans for SLHC Silicon Detector R&D • Projects and collaborations of the group • Strategies • Measurements of material properties • Sensor simulation/optimization • Simulation of detector performance

  3. Projects and Collaborations of the Group • The group is involved in the following Projects with respect to Detector R&D: • LHC (funded by BMBF) • HGF-Alliance (17 German Universities + DESY + FZK) “Physics at the terascale” • WP1: The Virtual Laboratory for Detector Technologies • WP2: Detector R&D Projects • HPAD-XFEL (with Bonn, PSI, DESY) • Approved. Project started. • PAD-Marie Curie (with CERN, DESY, …) “Marie Curie Training Network on Particle Detectors” • Approved in principle. Contract negotiations with EU.

  4. Strategies Study of macroscopic properties: IV, CV, TCT (transient current technique) Study of microscopic properties: DefectsDLTS: deep level transient spectroscopy, TSC: thermally stimulated current method) Sensor simulation/ optimization: E, I, C as a function of irradiation, material Neff, I, te,h :f(Doping, t, radiation dose, …) • simulation • experiment: -multi-TCT -testbeam Simulation of charge collection in detector detector = dE/dx x sensor x FE electronics e, spatial resolution, reconstruction Monte Carlo

  5. Examples Material Properties SLHC operating scenario, measurement compared to simulation: “Hamburg Model” Thin n-type epi-Silicon. No space charge sign inversion after proton and neutron irradiation. Explanation: Introduction of shallow donors overcompensates creation of acceptors. More pronounced in 25µm Si due to higher oxygen concentration.

  6. Study of Microscopic Defects: Thermally Stimulated Current (TSC)Neff Difference ND-H und Neff: VP TSC results for fully depleted diodes. Goal: Identification of defects responsible for long term annealing (“reverse annealing“) of Neff. VFD • rad. induced acceptors in lower half of band • gap: neg. charged, neg. space charge • hole traps (H). • Increase with annealing time • neg. space charge increases, Neff decreases! conduction band valence band

  7. Simulation of Detector Performance, Comparison with Test Beam Data Example testbeam measurement for irradiated CMS sensors integrated h (PH(R)/PH(L)+PH(R)) versus h for various incidence angles. Example simulation: Reconstructed position versus reduced incidence position on strip.

  8. Front structure (strip/pixel) I1 I0 t2 t1 Bias-Voltage Vbias t0 t1 t2 Backside Simulation of Charge Clouds hole cloud electron cloud Current is induced to all strips Readout of current allows to investigate charge cloud distribution e collected I0 current on closest strip I1current on neighboring strip black: sum of both strips h collected Goal: Study the effects of trapping.

  9. attenuator + amplifier x-y stage temporary detector support optics Laser z table Verification with Multi Channel TCT • Goal: Time-resolved measurement of charge collection in Si-pixel and strip detectors in multiple channels up to very high charge densities. fine-grain position and angle scans. • Multi-TCT under construction in Hamburg: • ps laser (1052 nm and 660 nm), <90ps, Wmax~200pJ, spot size <10 µm (red) • penetration depth 3 µm (red), 1000µm (IR) • fast amplifiers (miteq) • data acquisition with fast oscilloscope (500 MHz, 1GS/channel), possible upgrade to digitizer cards with up to 20 ch, synchronized • cooled detector support (Peltier) 10 ns

  10. People • Doris Eckstein (main Hamburg contact person) • Robert Klanner • Peter Schleper • Georg Steinbrück • Eckhart Fretwurst (defect engineering) • Julian Becker, PhD student (multi-TCT) • Volodymyr Khomenkov (starting ~March) (Detector simulation) • Ajay Srivastava (just started) (sensor simulation: TCAD,…)

  11. Backup

  12. Schematic set-up of the Multi-TCT bias voltage supply, leakage and guardring current measurement PID temperature controller z working distance x optic axis (z) optic fiber and optics y attenuators and amplifiers Oscilloscope laser and driver trigger line

  13. 660 nm (red) minimum energy: 1 mip  10 x XFEL /pulse  70 ps pulse width maximum energy: 140 pJ/pulse 4x104 XFEL-/pulse 100 million e-h pairs  4000 mips  800 ps pulse width 1052nm (infrared) minimum energy: 1 mip  10 x XFEL /pulse 70 ps pulse width maximum energy: 275 pJ/pulse 4x104 XFEL-/pulse 100 million e-h pairs  4000 mips  700 ps pulse width Laser system (PicoQuant) Gaussian beam after single mode fiber

  14. Laser system (red) maximum energy: 140 pJ/pulse 800 ps pulse width minimum energy: 22 pJ/pulse 70 ps pulse width

  15. Laser system (IR) minimum energy: 44 pJ/pulse 70 ps pulse width maximum energy: 275 pJ/pulse 700 ps pulse width

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