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T. Nuns , C. Inguimbert, S. Soonckindt - ONERA- DPhIEE

This study aims to validate the "effective nonionizing energy loss (NIEL)" model for high-energy electrons (>1MeV) in Silicon as part of the ESA contract. Experimental data is gathered on devices like CMOS Image Sensor (CIS) and Charge Coupled Device (CCD) to improve understanding of radiation degradation mechanisms.

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T. Nuns , C. Inguimbert, S. Soonckindt - ONERA- DPhIEE

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  1. Validation of “effective nonionizing energy loss (NIEL)” for high-energy(>1MeV) electrons in SiliconESA contract n°4000111337/14/NL/SW T. Nuns, C. Inguimbert, S. Soonckindt - ONERA- DPhIEE R. Burgon, B. Dryer, D. Hall, P. Smith - The Open University Centre of Electronic Imaging C. Poivey - ESA ESTEC

  2. Outline • Goal of the study • Presentation of the tested devices • Irradiation plan • Preliminary results • Photodiodes • CIS • CCD • NIEL calculations and modeling • Future work and analysis

  3. Goal of the study • Context • Prepare the Jupiter Icy moons Explorer (JUICE) mission • Mission radiation environment is dominated by electrons • Higher electrons energies than Earth environment • High total ionizing dose levels (some 100 krad after 10 mm equivalent Al shielding) • Electron are expected to be the main contribution for TNID • The NIEL is used to scale the electrical degradation, but • No experimental data available for a validation of the NIEL scaling for high electron energies • Some NIEL discrepancies are observed for low energies electrons • Explained by the “Effective NIEL” model proposed by C. Inguimbert et al. (ONERA); discrepancies are probably due to NIEL calculation uncertainties • Need of experimental data over 1 MeV for validation • Goals • Validation of effective NIEL model for high energy electrons • Validation of other degradation models such as DCNU for imagers for high energy electrons • Improvement of the understanding of TNID physical degradation mechanisms for high energy electrons and protons

  4. Effective approach • Experimental study • Select 3 device types • CMOS Image Sensor (CIS) managed by ONERA • Charge Coupled Device (CCD) managed by the Open University CEI • Photodiode managed by ONERA • Irradiation • High energy electron irradiation • Proton irradiation for NIEL scaling verification • Gamma irradiation for evaluation of the total ionizing dose effect • Calculation and Modeling • Evaluate the effective NIEL for high electron energies and gamma irradiation (60Co) and compare the experimental data with the NIEL scaling • Modeling the Dark Current Non Uniformity (DCNU) on the imagers and compare with the experimental data • Status of the study • Irradiations and measurements done (TRB passed) • Data analysis and final report due for the end of May 2017

  5. CIS e2v Saphirre • CIS Saphirre EV76C560 E2V (ONERA) • 1.3 Mpixel 1024 * 1280 pixel array • Pixel pitch 5.3 µm Pinned photodiode • Global and rolling shutter modes (only rolling measured) • 10 bits digitized output • Procurement of 20 samples with the same date code • 9 for the test plan • Measurements • Conversion factor (e-/lsb) at 21°C • Dark current at 15, 21, 27, 35°C • Mean dark current • DCNU • Activation energy • Random Telegraph Signal (RTS) at 15 and 21°C on ROI 100 x 100 pixels, 10 000 samples

  6. Photodiode PIPS Canberra • Photodiodes PIPS (PassivatedImplantedPlanarSilicon) FD50-14-300RM Canberra (ONERA) • Particle detector • 1 cm² area • 300 µm depth full depleted P/N junction • Procurement of 22 sampleswith the same wafer • 18 for the test plan • No window on the devices • Measurements • I(V) and C(V) forward and reverse at 15, 21, 27, 35°C • Extraction of the activation energy

  7. CCD e2v presentation • CCD e2v 47-20 (The Open University) • 1 Mpixel frame transfer • 13 x 13 μm pixels • Back illuminated • Advanced Inverted Mode Operation (AIMO) • 2 e- r.m.s. read noise • Affordable COTS • Good space heritage • 10 devices used in the study • 9 irradiated and 1 control

  8. CCD tests performed • System calibration at -20 °C with 5.9 keV X-rays incident on the CCD and the system noise calculated from the standard deviation of the signal in the serial overscan, using the gain calibrations. • Charge Transfer Inefficiency (CTI) using Extended Pixel Edge Response (EPER) at -20 °C at four signal levels (1ke-, 5ke-, 10ke, 20ke-) using light from a LED. • Pinning voltage at -20 °C - the dark current is measured for Vss between 0V and 11.6V with the onset of pinning used as a measure of the eventual flatband voltage shift from ionising radiation. • Dark current (DC) and Dark Signal Non-Uniformity (DSNU) and at -30, -20, -10, 0, 10 and 15 °C. • Activation energy of the dark current - using the data from (4) the dark current is plotted against the 6 temperature points in 1/T. The slope of the line gives the activation energy of the dark current. • RTS at 15 °C – records 1000 dark current images from a ROI of 100x100 pixels from the image and store regions separately.  NIEL CCD test Camera System

  9. Irradiation plan • Apply the same total ionizing dose on the samples • The applied total dose is the same whatever the energy • Up to 30 Gy(Si) for proton irradiations • Up to 100 Gy(Si) for electron and gamma irradiations • Intermediate doses for photodiodes • Irradiation devices unbiased in the dark, room temperature • Measurements 1 month after irradiation

  10. Photodiode: Preliminary dark current increase • Example at 27°C reverse bias • Consistent behaviour between the maximum fluence and the half fluence

  11. Photodiode: Preliminary dark current damage factor • Shapes are consistent all together; no issue of range at 1 MeV electrons or 17.25 MeV protons • Exception for Gamma (ionizing dose effect ?)

  12. CIS: Preliminary conversion factor • Small decrease of the conversion factor • Not taken into account in the dark current variation (negligible)

  13. CIS: Degradation homogeneity 1/2 • Dark current increase is homogeneous accross the rows and columns • Homogeneous irradiation Harwell 6,5 MeV proton irradiation PSI 200 MeV proton irradiation

  14. CIS: Degradation homogeneity 2/2 • Border effects for electron and gamma irradiation. Probably ionizing dose effect Jyväskylä 20 MeV electron irradiation ONERA 1 MeV electron irradiation

  15. CIS:Preliminary mean dark current increase damage factor • Large impact of the total ionizing dose effect for electrons. Example 27°C • Have to separate the peak of the DCNU and the tail to extract the DD effect

  16. CCD 47-20: Preliminary dark signal data

  17. CCD 47-20: Preliminary RTS data RTS pixels noisy pixels 6 MeV e- 70 MeV P+ 100 Gy γ

  18. NIEL scaling dark current photodiodes • NIEL and effective NIEL calculated • Protons, electrons, gamma • Comparison with damage factors • Dark current of the photodiodes • Minority carriers’ lifetime (ONERA internal study) • The same CANBERRA photodiodes • Hamamatsu S1337-33BQ photodiodes • Results seem consistent with the electron effective NIEL curve • CCD and CIS data not ready yet

  19. Future work of the study • Measurement analysis • Extract the relevant data • Compare with the NIEL calculations • DCNU Modeling • Compare with the experimental data • Include the possible total ionizing dose effect • Final report planned for end of May 2017

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