Epitaxial Graphene THz Technology

1. Epitaxial Graphene THz Technology Momchil T. Mihnev, Charles J. Divin and Theodore B. Norris Department of Electrical Engineering and Computer Science, and Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, MI 48109, USA Claire Berger and Walt A. de Heer School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA Epitaxial graphene may transform the computing and communications industry Ultrafast THz dynamics of Epitaxial graphene Interlayer energy transfer in Epitaxial graphene Multilayer epitaxial graphene (MEG) was first reported about a decade ago, but it has already revealed a wealth of new physics and is also envisioned to find a truly extensive range of applications in science and engineering. In particular, MEG holds considerable promise to succeed current semiconducting materials for ultrahigh-speed high-performance nanoelectronics and nanophotonics applications. We have performed experiments using ultrafast optical methods to study the high-speed (terahertz) properties of MEG. Specifically, we have observed for the first time how electrons in one layer can interact with electrons in another layer; this may open up new approaches to managing heat flow in nanoelectronic devices. Sponsored by NSF-MRSEC through contract DMR-0820382