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This study explores spin transport in carbon nanotubes and the behavior of spin-FET devices. The importance of non-local effects and the role of FET geometry are emphasized. Non-local measurements reveal hysteric switching in both current and non-local voltage, and back gate controls both MR and MRV signals. Multi-dot physics and non-local measurement techniques provide valuable insights into spin injection in carbon nanotubes and spin-FET behavior.
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Multi-terminal spin dependent transport in carbon nanotubes Chéryl FEUILLET-PALMA Laboratoire Pierre Aigrain Ecole Normale Supérieure, Paris France Co-workers : T. Delattre, T. Kontos, G. Fève, J.-M. Berroir, D.C. Glattli, B. Plaçais Theory: A. Cottet, M.-S. Choi
VSD VSD VG Spin signal HcL< HcR A magnetic tunnel junction… R H HcR HcL SiO2 400nm F F CG Spin-FET Behaviour Doped Si Importance of Non-local effects FET geometry
Non-local measurement N-F Conductance F-N Voltage Hysteretic switching in both the current and the non-local voltage Back gate controls both MR and MRV signals similarly to the local case.
dI/dV (µS) T=1.8K Non-local measurement One « side » can be in the Coulomb blockade regime and not the other side. Modulations of the MR in current similar to two probe case
Multi-dot physics and non-local measurement dI/dV (µS) Greyscale of non-local voltage Greyscale of non-local conductance T = 1.8 K T = 1.8 K V (µV) Diamond pattern in both non-local voltage and conductance as a function of two gates characteristic of multi-dot physics
Multi-dot physics and non-local measurement Back gate fixed Side gate fixed Side gate controls the non-local MR and MRV on the other side of the structure
Conclusion Spin injection in Carbon Nanotube and spin-fet behaviour Non-local MR and MRV are gated controlled Multi-dot physics : quantum coherent spintronics Spin transport qualitatively described in a multi-terminal scattering model…