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Back contact materials of CIGS solar cell. Contact resistance Diffusion & Reaction Price. Electrical properties of MoSe 2. Parallel to c-axis 3690 Ω∙ cm 1 μ m – 0.37 Ω∙ cm 2. Perpendicular to c-axis 2.5 Ω∙ cm 1 μ m – 0.00025 Ω∙ cm 2. Ohmic contact. Ohmic contact.
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Back contact materials of CIGS solar cell • Contact resistance • Diffusion & Reaction • Price
Electrical properties of MoSe2 • Parallel to c-axis • 3690Ω∙cm • 1μm – 0.37Ω∙cm2 • Perpendicular to c-axis • 2.5Ω∙cm • 1μm – 0.00025Ω∙cm2
Ohmic contact Advantage : Electron barrier formation Disadvantage : Schottky barrier
Metal-selenium reaction No selenide formation on Ni or Ni/Mo Diffusion barrier (native nickel oxide layer)
Sodium effect Sodium selenide serves role of selenium reservoir