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Silicon Carbide for Secondary Collimators

Silicon Carbide for Secondary Collimators. R. Blanchon. 5/20/2009. Specification. Ceramic absorber with metallic support Dimensions: Tiles of 40 mm * 20 mm * 10 mm Required properties: Electrical resistivity: 1 to 100 Ω .m Low CTE High thermal conductivity and specific heat

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Silicon Carbide for Secondary Collimators

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  1. Silicon Carbide for Secondary Collimators R. Blanchon 5/20/2009

  2. Specification • Ceramic absorber with metallic support • Dimensions: Tiles of 40 mm * 20 mm * 10 mm • Required properties: • Electrical resistivity: 1 to 100 Ω.m • Low CTE • High thermal conductivity and specific heat • High density • Candidate: Silicon Carbide (SiC)

  3. Potential suppliers

  4. Potential suppliers [J/kg] [W/m]

  5. F Ω F Electrical Resistivity • First measurements on ESK samples • Without surface preparation → ρelec = 43 Ω.cm • With surface preparation →ρelec= 5380 Ω.cm • Graphitization of SiC

  6. Brazing tests (Ultrasounds) 40*24*8 mm3 8*24*8 mm3 Ag-Cu-Ti (780 °C) • Crack in SiC • Propagation in 55% of the tile • Brazed joint → OK • Lack of bonding at the edge

  7. Brazing tests (Microscopy)

  8. Brazing tests (Program) • Brazing at low temperature • Au-Ge Alloy at 356 °C • Brazing with grooves • Ag-Cu-Ti Alloy at 780°C • Brazing with a molybdenum sheet • Ag-Cu-Ti Alloy at 780°C • Stress absorber • Ultrasounds + Microscopy + Mechanical tests

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