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Edgeless ATLAS pixel detectors - first results

Edgeless ATLAS pixel detectors - first results. 07/09/09. Run 4750 of ATLAS pixel detectors. N-in-P detectors fabricated in high resistivity FZ silicon. ATLAS pixel detectors compatible with the FI3 chip

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Edgeless ATLAS pixel detectors - first results

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  1. Edgeless ATLAS pixel detectors - first results 07/09/09

  2. Run 4750 of ATLAS pixel detectors • N-in-P detectors fabricated in high resistivity FZ silicon. • ATLAS pixel detectors compatible with the FI3 chip • 2 sides slim edge detectors fabricated. Also, standard (non-edgeless) ATLAS pixels as reference • Trenches filled with poly used to isolate the short edge cut. • This is a GICSERV project, the fabrication run is paid by MICINN and the mask by IFAE FI3

  3. Detector layout UBM Δ G 30 um 6um 10um 50 um 30um 5um Si3N4 SiO2 p+ p+ p+ p+ n+ n+ n+ poly 150um p-stop p guard ring Side cut (DRIE or Diamond saw) pixels 300um p+ Al • Polysilicon used to fill the trenches to assure mechanical strength • Thermal oxide inside trenches to assure insulation

  4. Diamond cut DRIE cut Trench P-stop Bump pad Pixel Guard ring

  5. Δ G

  6. Detector layout • 7 detector designs • 6 edgeless + standard ATLAS pixel • Parameters: • G (guard ring width at “edgeless” edge) • Δ (distance guard ring - trench) (Some A, B, E detectors have extra guards in the non-edgeless edge to test their efficiency. In total, 10 different types)

  7. Wafer

  8. Wafer E E-2 D C STANDARD A A-2 B B-2 F

  9. Some pictures Run 4750 wafer 5 Electroless UBM with NiAu Diced with diamond saw (not RIE)

  10. G = 84 µm Δ = 35.5 µm Type B

  11. G = 84 µm Δ = 35.5 µm Type B-2 10 lateral guard rings in the non-edgeless sides

  12. G = 24 µm Δ = 30.5 µm Type E The “most edgeless”

  13. G = 84 µm Δ = 187 µm from second guard ring Type F Extra full guard ring

  14. Standard ATLAS 11 guard rings

  15. First electrical test • Run 4750 wafer 5 • I-V up to 100 V (limit of the setup), 20ºC • Full detector area biased by punch-through from guard ring – can’t test pixels area separately • 13 detectors (at least one of each type) tested. • All work OK! • High leakage current but no breakdown • Does’t seem to be a correlation between electrical behaviour and sensor design -> the trenches effectively isolate the active area of the sensor from the dicing edges

  16. I(V), all sensors, 20ºC (I = current in active area of sensor + current from guard ring)

  17. I(t), type F sensor at 100V, 20ºC

  18. Outlook • Sensors given to Mokhtar for bump-bonding • 1 type E (design with the thinner edge) • 1 type F (extra guard ring) • 1 standard ATLAS • Wafers 4 and 7 to be diced by DRIE. Should be finished by next week

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