260 likes | 442 Views
Formosa Microsemi Co., LTD. Company Profile. Company Profile. * Company Overview * Company Policy * Company Organization * Quality Certificate * Product Construct * Patent Certificate * Revenue Growth * Factory Equipment * Product Capacity * Package List & New Package Development Plan
E N D
Formosa Microsemi Co., LTD Company Profile
Company Profile * Company Overview * Company Policy * Company Organization * Quality Certificate * Product Construct * Patent Certificate * Revenue Growth * Factory Equipment * Product Capacity * Package List & New Package Development Plan * Major Customers
Main Products • Schottky Barrier Diode • Switching Diode • Zener Diode • General Purpose Rectifier • Fast Recovery Rectifier • Super Fast Rectifier
Taiwan Factory Located : Taipei , Taiwan
MainLand China Factory Located : HangZhou
MainLand China Factory Located : HangZhou
MainLand China Factory Located : SuZhou
Company Policy Innovation Quality Service
Company Organization Taiwan Factory Mr. Ben Huang Rectifiers Diode Small Signal Bridge Others Taiwan FMS Board Director General Manager Mr. Ben Huang SuZhou Factory Mr. David Xu China Local Sales Company Taiwan Local Sales Company HangZhou Factory Mr. Yang QiJI Switching Diode Rectifiers HangZhou Formosa Mr. Stephen Huang Formosa Technology Wafer FAB Diac Diode ShenZhen office Mr.Jet Chang Others
Quality Certificate ISO 9001:2000 ISO 9001 ISO14001
Product Construct Formosa MS - SMA Traditional - SMA 1. Light 2. Thin 3. Short 4. Small 5. The quality is good (High quality) 6. The patent system process , has competitiveness 1. The contact pin picks trimming, the curved formation, in the process the material easy indirect damage, the quality not to be easier to control. 2. The copper lead frame only has 0.2mm thickness. 3. The outlook big, thickness is high, the user must consider gives the bigger spatial design, is more uneconomical. 4. Traditional outlook. 5. The soldering contact face picks the machinery formation, smoothness is worse. 6. Process on the traditional control, the quantity produces slowly.
Patent Certificate Taiwan Patent No.124076 Taiwan Patent No.134855 Taiwan Patent No.159803 無引線型片狀橋式整流器之構造 表面黏著型排列二極體之製造方法 表面黏著型整流二極體之製造方法
Patent Certificate Taiwan Patent No.256585 Taiwan Patent No.253150 Taiwan Patent No.195776 功率半導體之散熱構造 表面黏著型整流 二極體之結構改良 雙金屬與陶瓷組成之功率 半導體構造及其製造方法
Patent Certificate U.S.A. Patent No.6,085,396 U.S.A. Patent No.6,334,971 B1 Japan Patent No.3105138 功率半導體之冷卻裝置 整流二極體之製造方法 表面黏著型排列 二極體之製造方法
Patent Certificate China Patent No.ZL99109757.2 China Patent No. ZL 2004 2 0050732.3 China Patent No. ZL 00 1 21446.7 功率半導體之散熱構造 表面黏著型整流 二極體之製造方法 表面黏著型排列 二極體之製造方法
Revenue Growth Unit : Million NTD Forecast
Product Capacity Axial SMD Diffusion Wafer
Major Customers OEM Business
Company Vision Forever innovation create a Famous diode in the world to build First class enterprise 永續經營 持續創新 建立二極體知名品牌 創造卓越的企業 Thank You