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Zheng Li 1 and Tanja Palviainen 2 1 Brookhaven National Laboratory

3D Simulation Studies of Irradiated BNL One-Sided Dual-column 3D Silicon Detector up to 1x10 16 n eq /cm 2. Zheng Li 1 and Tanja Palviainen 2 1 Brookhaven National Laboratory 2 Lappeenranta University of Technology Work based on the period 2/15/-4/15/07 at Brookhaven National Laboratory.

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Zheng Li 1 and Tanja Palviainen 2 1 Brookhaven National Laboratory

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  1. 3D Simulation Studies of Irradiated BNL One-Sided Dual-column 3D Silicon Detector up to 1x1016 neq/cm2 Zheng Li1 and Tanja Palviainen2 1Brookhaven National Laboratory 2Lappeenranta University of Technology Work based on the period 2/15/-4/15/07 at Brookhaven National Laboratory *This research was supported by the U.S. Department of Energy: Contract No. DE-AC02-98CH10886

  2. OUTLINE • Simulated detector structure • Simulation tools • Simulated full depletion voltage up to 1x1016 neq/cm2 • 3D profiles of hole concentration and E-field up to 1x1016 neq/cm2 • Various other geometries • Summary

  3. Detector Structure • BNL’s one-sided, dual column 3D detector • There are two n-type (blue) and two p-type (red) doped columns on p-type substrate • Same type of doped columns are placed to the opposite corners n+ Front-side: processing side 270 µm p+ Backside: floating with SiO2 =50 µm p+ n+ p+ =10 µm 300 µm p, 10k-cm n+ p+ n+

  4. Simulation • Silvaco DEVEDIT3D, DEVICE3D (ATLAS) • The detector structure was simulated with different fluencies (Neff) • Oxide charge of 4x1011 /cm2 is implemented • 3D hole and E-field profiles are simulated

  5. Simulated Vfd values in dual column 3D detectors with different fluencies Current vs. V (no lifetime degradation entered) Vfd 3D is 1.4 times higher: Small electrodes

  6. 5x1014 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  7. 1x1015 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  8. 2x1015 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  9. 3x1015 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  10. 4x1015 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  11. 5x1015 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  12. 6x1015 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  13. 7x1015 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  14. 8x1015 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  15. 9x1015 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  16. 1x1016 neq/cm2 • 200V, hole conc., electric field n+ Hole concentration n+ p+ p+ E-field p+ p+

  17. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  18. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  19. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  20. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  21. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  22. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  23. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  24. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  25. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  26. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  27. 9x1015 neq/cm2 (200V) p+ n+ p+ n+ Hole concentration The volume under the columns can be depleted with modest E-field: not dead area, and providing a sensitivity under the columns

  28. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  29. 9x1015 neq/cm2 (200V) • hole conc. p+ n+ p+ n+ Hole concentration

  30. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  31. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  32. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  33. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  34. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  35. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  36. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  37. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  38. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  39. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  40. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  41. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  42. 9x1015 neq/cm2 (200V) • electric field p+ n+ p+ n+ E-field

  43. Varieties in detector geometry • The pad size (Lc) and the distance between pads (Lp) were varied Lp Lc Lc

  44. Lc=3um, Lp=10um • 200V, hole conc., electric field n+ Hole concentration n+ E-field p+ p+ p+ p+

  45. Lc=3um, Lp=20um • 200V, hole conc., electric field n+ Hole concentration n+ E-field p+ p+ p+ p+

  46. Lc=5um, Lp=30um • 200V, hole conc., electric field n+ Hole concentration n+ E-field p+ p+ p+ p+

  47. Lc=5um, Lp=40um • 200V, hole conc., electric field n+ Hole concentration n+ E-field p+ p+ p+ p+

  48. Lc=5um, Lp=50um • 200V, hole conc., electric field n+ Hole concentration p+ n+ p+ E-field p+ p+

  49. Simulated Vfd values for different geometries in detector Lp≤ 30um With lifetime degradation

  50. BNL-2C-3D, p-type bulk (300 µm), p+ and n+ columns (270 µm) LP = 30 µm, 1x1016 neq/cm2, V = 150 V Front side p+ n+ n+ p+ Full 3D detectors with reduced column spacing LP LP~ dCCE --- less trapping Smaller V --- no breakdown problem Backside

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