1 / 8

RF&A/MS Summer 2011

RF&A/MS Summer 2011. Broaden scope to include analog applications Contribute to Mixed-Signal section of System Drivers chapter Redefine chapter organization to strictly align by device technology WAS: CMOS, Bipolar, Power-amp., mm-wave, MEMS, passives

yates
Download Presentation

RF&A/MS Summer 2011

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. RF&A/MS Summer 2011 • Broaden scope to include analog applications • Contribute to Mixed-Signal section of System Drivers chapter • Redefine chapter organization to strictly align by device technology • WAS: CMOS, Bipolar, Power-amp., mm-wave, MEMS, passives • IS: CMOS, Si Bipolar, III-V, Passives, HVMOS • Apply M-t-M whitepaper methodology • Markets  Applications  Circuits  Device Technology  FOMs • Verify proscribed conditions are met: FOM, LEP, WAT, SHR, ECO

  2. Membership IEEE Anthony Immorlica Jr. Infineon SnezanaJenei, Carsten Ahrens Intel Ian Young, Jan-Erik Mueller ITRS Linda Wilson TowerJazz Semiconductor Ed Preisler National Semiconductor Wibo van Noort NIST Herb Bennett PMC-Sierra Brian Gerson Qualcomm Geoffrey Yeap EvgeniGousev Raytheon Tom Kazior RF Micro Devices Julio Costa Samsung Hansu Oh Skyworks Peter Zampardi Sony KaneyoshiTakeshita SRC David Yeh ST Pascal Chevalier Technology Research Institute Ginkou Ma Teledyne Scientific Bobby Brar TI KamelBenaissa TSMC Douglas Pattullo Alex Kalnitsky UC Riverside Albert Wang Univ. of Toronto SorinVoinigescu UT/Dallas Sam Shichijo New Members Toshiro Futatsugi, Fujitsu Yoshihiro Hayashi, Renesas Tatsuya Ohguro, Toshiba AMD Emerson Fang Freescale Jay John, Steve Cosentino, JiangkaiZuo Hitachi Ltd. DighHisamoto HRL David Chow IBM Jack Pekarik, Dawn Wang, MattiasDahlstrom, Jean-Olivier Plouchart, Taffy Kingscott, Natalie Feilchenfeld

  3. System Drivers • Circuit-level FOMs related to technology FOMs • Low-noise amplifier (LNA) • Voltage-controlled oscillator (VCO) • Power amplifier (PA) • Analog-to-digital converter (ADC) • Serializer-Deserializer (SerDes) • Example PA, LNA FOM

  4. CMOS • Reflect the RF & Analog performance of PIDS technologies (HP and LSTP) • fT, fMAX, NFMIN, analog gain, flicker noise, matching • More rigorous attempt to predict effects of parasitic resistances and capacitances • fTincreases faster compared to 2009 roadmap • fMAXlower in near-term reflecting parasitic effects Preliminary results: subject to change

  5. Bipolar • Following changes in the table have occurred 1. Dropped the Power-Amplifier (PA) NPN (cf. scope). 2. Dropped the general analog NPN parameters i.e. 1/f noise and current matching (cf. scope). Added in text. 3. Completed an update of the HS-NPN roadmap to line up with the ongoing fT/fMAX trend and related WE scaling, in line with application requirements: a. Small decreased in the pace of fT and fMAX increase with a slowing down of WE reduction. b. Updated of all the other parameters accordingly. c. Added intrinsic slew rate (SLi). d. Updated coloring. 4. Completed a major update of the HS-PNP roadmap to cover the applications of the revised scope: a. Increased of the breakdown voltages and decreased fT accordingly. b. Rewiewed the pace of the emitter width decrease. c. Updated of all the other parameters accordingly. d. Added collector-base breakdown voltage (BVCBO). e. Added linearity efficiency cut-off frequency (fLE). f. Updated coloring

  6. III-V technologies • Analog, Microwave, mm-wave applications • Emphasis on mm-wave • Technology roadmaps truncated at expected end of scaling • GaAs PHEMT(2015), GaAs MHEMT(2019), InP HEMT(2021), GaN HEMT(2021) and InP HBT(2023) • FOMs depending on technology • fT, fMAX, gm, VBD, • Power, gain, efficiency • NFMIN, GA @ 10, 24, 60, 94GHz • LNA NF, GA @ 140, 220 GHz

  7. Passive devices • Novelties/Changes to 2009/2010: • Tables : On-chip passives only • Resistors • Capacitors • Inductors • Varactors • Text : • Emphasis on “parasitics aware design“ • Better definitions of (all) FoM • Antennas • Transmission lines using BEOL wiring • Off-chip passives table omitted • Coordinated/cross-referenced text with Assy &Packaging • Inter-TWG : Interconnects and Assembly and packaging

  8. HVMOS • New section in 2011 • HVNMOS & HVPMOS • Supporting Power-management & Display-driver applications • FOM • BVDSS • RON • Integrated CMOS node • Truncate the roadmap at 90nm – uncertain of ever needing more dense CMOS

More Related