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Memory Devices on DE2-115

Memory Devices on DE2-115. 數位電路實驗 TA: 吳柏辰. Author: Trumen. Outline. SRAM SDRAM FLASH EEPROM SD Card. SRAM. Features. 16M-bit (2MB) static RAMs organized as 1024K words by 16 bits . High-speed access times: speed = 20ns for VDD 1.65V to 2.2V speed = 10ns for VDD 2.4V to 3.6V

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Memory Devices on DE2-115

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  1. Memory Devices on DE2-115 數位電路實驗 TA: 吳柏辰 Author: Trumen

  2. Outline • SRAM • SDRAM • FLASH • EEPROM • SD Card

  3. SRAM

  4. Features • 16M-bit (2MB)static RAMs organized as 1024K words by 16 bits. • High-speed access times: • speed = 20ns for VDD 1.65V to 2.2V • speed = 10ns for VDD 2.4V to 3.6V • speed = 8ns for VDD 3.3V + 5% # of addresses Maximum performance frequency: 125MHz

  5. Schematic Diagram

  6. SRAM Pin Assignments

  7. SRAM Block Diagram

  8. SRAM Pin Configuration • 48-pin TSOP-1 (12mm x 20mm)

  9. Truth Table

  10. Read Cycle • Min. read cycle time tRC= 8ns

  11. Write Cycle • Min. write cycle time tWC= 8ns

  12. The End. Any question?

  13. Reference • "DE2-115 User Manual" by Terasic. • "DE2-115_MB.pdf" by Terasic. • "61WV102416ALL(ISSI_1M x 16_SRAM).pdf" by ISSI.

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