1 / 1

References

References. [1] S. Nakamura, T. Mukai , and M. Senoh , “Candela-class high-brightness InGaN / AlGaN double- heterostructure blue-light-emitting diodes,” Appl . Phys . Lett ., vol. 64, no. 13, pp. 1687–1689, Mar. 1, 1994.

zalika
Download Presentation

References

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. References [1] S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaNdouble-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett., vol. 64, no. 13, pp. 1687–1689, Mar. 1, 1994. [2] S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, “InGaN-GaNmultiquantum-well blue and green light-emitting diodes,”IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 278–283,Mar./Apr. 2002. [3] S. J. Chang, et al., “400-nm InGaN-GaN and InGaN-AlGaNmultiquantumwell light-emitting diodes,” IEEE J. Sel. Topics Quantum Electron.,vol. 8, no. 4, pp. 744–748, Jul./Aug. 2002. [4] Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Muka, “Ultrahigh efficiency white light emitting diodes,” Jpn. J. Appl. Phys., vol. 45, no. 41, pp. L1084–L1086, Oct. 2006. [5] F. A. Pounce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices,” Nature, vol. 386, pp. 351–359, Mar.1997. [6] X. H. Wu, et al., “Dislocation generation in GaNheteroepitaxy,” J. Cryst. Growth, vols. 189–190, nos. 1–2, pp. 231–243, Jun. 1998. [7] S. W. Lee, et al., “Lattice strain in bulk GaNepilayers grown on CrN/sapphire template,” Appl. Phys. Lett., vol. 94, no. 8, pp. 082105-1–082105-3, Feb. 2009. [8] C. H. Kuo, et al., “Nitride-based light-emitting diodes with p-AlInGaNsurfacelayers,” IEEE Electron. Dev. Lett., vol. 52, no. 10, pp. 2346–2349, Oct. 2005.

More Related