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The Estimation of the Residual Stress in Ferroelectric Thin Film

Single Crystal. ε a (0)=114.3. ε a (0)=111. ε c (0)=55.3. ε c (0)=55. ε(0)=93.8. The Estimation of the Residual Stress in Ferroelectric Thin Film. Microstructures Size effect, orientation. Properties of ferroelectric film. Interface Electrode, Boundary. Residual stress.

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The Estimation of the Residual Stress in Ferroelectric Thin Film

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  1. Single Crystal εa(0)=114.3 εa(0)=111 εc(0)=55.3 εc(0)=55 ε(0)=93.8 The Estimation of the Residual Stress in Ferroelectric Thin Film Microstructures Size effect, orientation Properties of ferroelectric film Interface Electrode, Boundary Residual stress Residual Stress in PbTiO3 thin film on different substrate Estimating residual stress byRaman scattering. Assumption Only a biaxial stress acts in the plane (perpendicular to the surface) of the thin film The reciprocal of the dielectric constant with changing stress according to the modified Devonshire theory

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