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Resistive random-access memory (ReRAM) is a type of non-volatile storage that works by altering the resistance of a solid dielectric. A mermister component is found in a resistive random-access memory (ReRAM) device, and its resistance varies when different voltages are applied across it. The specific advantages of ReRAM include low voltage operation, higher performance, great capacity, scalability, and stable memory, as well as instant data recovery in the event of a power outage.
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