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Arithmetic Operations within Memristor -Based Analog Memory Mika Laiho , Eero Lehtonen

Arithmetic Operations within Memristor -Based Analog Memory Mika Laiho , Eero Lehtonen Microelectronics Laboratory, University of Turku. Key Points. Be able to program the memristor to the reference resistance using the cyclincally programming scheme

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Arithmetic Operations within Memristor -Based Analog Memory Mika Laiho , Eero Lehtonen

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  1. Arithmetic Operations within Memristor-Based AnalogMemory Mika Laiho, EeroLehtonen Microelectronics Laboratory, University of Turku

  2. Key Points • Be able to program the memristor to the reference resistance using the cyclincally programming scheme • Computing capability, such as addition, both on negative and positive analog conductance, is demonstrated

  3. Digital Memory verse Analog Memory • Digital memory (1-bit information depending on ON/OFF state, including SRAM, DRAM, PCRAM, MRAM, Flash, etc.) • Analog memory (many intermediate states between ON/OFF states) • Memoristor can be used for both digital and analog memory

  4. Memristor • Without programming threshold • Linearly programmed with charge flowing through the device • AC readout for memory application • Pose high requirements on R/W cycles • With programming threshold • Nonlinear programmed with charge flowing through the device • DC readout possible

  5. Memristor With Programming Threshold Bipolar reversible and nonvolatile switching of nanoscaleTiO2-xdevices J. J. Yang et al., Memristor switching mechanism for metal/oxide/metal nanodevices, Nature Nanotechnology, 2008, 3, 429-433

  6. Modeling Memristor The current through the memristor The time derivative of the state variable W The window function • ᵅ and ᵝare fitting constants that are used to characterize the ON state • ᵡand ᵞare the fitting constants used to characterize the net electronic barrier • when the memristor is switched OFF • a, b, p and q are constants depending on the physical properties of the memristor • w is the state variable of the memristor

  7. Simulated Memristor Characteristics Device simulation based on SPICE model

  8. Simulated Memristor Characteristics Device simulation based on SPICE model

  9. Memristor Analog Memory/Computing Circuit VSSR

  10. Memory/Computing Circuit Simulation V1 CT Vin Imem W Ir Circuit simulation based on SPICE model

  11. Processing as Summation Programming phase Monitoring phase gm1 = gm4 + gm5.

  12. Processing as Invertor

  13. Processing as Universal Addition

  14. Conclusions • Memristorscould be used as analog memories and for computing • A two-memristor configuration was proposed to be used as a memory element so that addition operations of both positive and negative numbers could be performed • Further study on performing multiplication and division is expected

  15. Limitations • Control circuits for programming the memristors is too complicated increasing design complexity • Many sequences are required leading to slow programming • The programming time is unpredictable

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