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EBL Structure

EBL Structure. Structure 1. N-EBL. Barrier. Well. Al0.17Ga0.83 Al0.25Ga0.75 Al0.17Ga0.83. Structure 2. P -EBL. P-Barrier. P-Barrier. P-Barrier. Well. Structure 3. P -EBL. N-EBL. P-Barrier. P-Barrier. P-Barrier. Well. Structure 4. 20nm Al 0.2 Ga 0.8 N.

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EBL Structure

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  1. EBL Structure

  2. Structure 1 N-EBL Barrier Well Al0.17Ga0.83 Al0.25Ga0.75 Al0.17Ga0.83

  3. Structure 2 P-EBL P-Barrier P-Barrier P-Barrier Well

  4. Structure 3 P-EBL N-EBL P-Barrier P-Barrier P-Barrier Well

  5. Structure 4 20nm Al0.2Ga0.8N p-EBL GaN InGaN p-GaN 2nm Al0.05Ga0.95N

  6. Structure 5 Al0.2Ga0.8N 5nm n-GaN MQW Superlattice n-EBL Al0.1Ga0.9N/GaN 3nm/1nm 5pair

  7. Structure 6 20nm Al 含量 0%~25%~0% p-EBL GaN p-GaN InGaN

  8. Structure 7 p-AlGaN Original structure MQW(GaN/InGaN) n-GaN p-GaN p-AlGaN New structure p-GaN MQW(GaN/InGaN) 透過在MQW與EBL間插入一層AlGaNsuperlattice，做為緩衝last barrier 與EBL lattice mismatch 所帶來能帶傾斜的效應!!進而增加EBL有效的能障高度… n-GaN

  9. Structure 8 p-AlGaN Original structure MQW(GaN/InGaN) p-GaN n-GaN New structure p-type p-GaN n-GaN n-type 在last barrier 做一n參雜，目的在於形成一空乏區內建電場!透過PN面空乏區電場來去抵補極化場!!

  10. 極化場方向 內建電場方向

  11. Structure 9 p-AlGaN Original structure MQW(GaN/InGaN) p-GaN n-GaN EBL InGaN barrier GaN+last barrier New structure A p-type MQW(InGaN/InGaN) n-GaN 在QW中使用InGaN/InGaN,增加晶格與晶格間的長晶匹配並在最後Last barrier處 做一 GaN的能帶調變，目的在改善與最後的Al-GaN 晶格missmatch!! 藉此改善 晶格間的極化效應。 Graded-GaN

  12. EBL InGaN barrier P-GaN+last barrier MQW(InGaN/InGaN) New structure B p-type Graded P-GaN n-GaN

  13. EBL InGaN barrier P-GaN+last barrier MQW(InGaN/InGaN) New structure C p-type Graded P-GaN n-GaN SuperLattice

  14. Reference • Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes Sheng-Horng Yen, Miao-Chan Tsai, Meng-Lun Tsai, Yu-JiunShen, Ta-Cheng Hsu, and Yen-KuangKuoIEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 21, NO. 14, JULY 15, 2009 975 • Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer Yu-Hsuan Lu, Yi-Keng Fu, Shyh-Jer Huang, Yan-Kuin Su, RongXuan et al. • Enhancing the performance of green GaN-based light-emitting diodes with graded superlatticeAlGaN/GaN inserting layer Junjie Kang, Hongjian Li, Zhi Li, Zhiqiang Liu, Ping Ma, Xiaoyan Yi, and Guohong Wang

  15. Thanks for your attention

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