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Creating Snow flake structures using EBL

Creating Snow flake structures using EBL. Wafer. SiO 2 wafer with a 500 nm (5000 Å) oxide thickness Nanospec to verify oxide thickness 0-10 Ohms or 0-100 Ohms. Spin On (electrodes). Wafer should be cleaned at wet bench with AIM protocol

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Creating Snow flake structures using EBL

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  1. Creating Snow flake structures using EBL

  2. Wafer • SiO2 wafer with a 500 nm (5000 Å) oxide thickness • Nanospec to verify oxide thickness • 0-10 Ohms or 0-100 Ohms

  3. Spin On (electrodes) • Wafer should be cleaned at wet bench with AIM protocol • Prior to spin-on wafer oxide thickness should be verified with the nanospec • Pre-heat sample for approximately 90 seconds on hot plate @ 180°C • 60% PMMA 495 C4 – Recipe 8 @ 3000RPM: ≈ 90nm thickness • Bake @ 180°C on hot plate for 5 minutes • Nanospec to verify film thickness

  4. EBL (electrodes) • Set apertures to 30um (micro meters) • Defining and Blanking aperture in the 30 um position • Beam current 8pA (Pico amps) • Run file: Snowlong_Chara.RF6 • Area Dosage 260

  5. Development (electrodes) • MIBK/ IPA 1:3 • 1 minute developing • 30 sec agitation • 30 sec still

  6. Etching (electrodes) • Buffered Oxide Etchant (BOE) • Spray the surface of the sample with Deionized water and allow a layer of water to remain on the surface of sample before submerging it into the etchant • 1 minute etch (Buffered Oxide Etchant 7:1) • Agitation total time • Etches ~80 nm

  7. Physical Vapor Deposition (electrodes) • Sputter • 50 Watts on both Axial and Flex Guns • Deposition pressure: 8 mTorr, • Argon gas flow rate 25.5 Sccm • Cr – 7min 30 sec (Axial Gun) • Au – 4 min (Flex Gun) • ~ 100 nm total deposition thickness

  8. Lift Off (electrodes) • Sonication w/ Acetone • Sonicate until sample is clean there is no designated time • Clean w/ AIM (Acetone, IPA, Methanol) wash

  9. Spin On (Pads) • Wafer should be cleaned at wet bench with AIM protocol • Prior to spin-on wafer oxide thickness should be verified with the nanospec • Pre-heat sample for approximately 90 seconds on hot plate @ 180°C • 100% PMMA 495 C4 – Recipe 8 @ 2000RPM: ≈ 300nm thickness • Bake @ 180°C on hot plate for 7:30minutes • Nanospec to verify film thickness

  10. EBL (Pads) • Apertures set to 50 um (micro meters) • Defining aperture in the open position • Blanking aperture in the 50 um position • Beam current 100 pA (Pico amps) • Run file: Snowlong_AL100_Pads.RF6 • Area Dosage 280 • From the end of the scratch • To find the alignment mark move the stage on the delta xy • Move -0.2 in the x-axis • Center the alignment mark • Move -0.1 in the x and -0.1 in the y • Center the structure preferably using crosshairs for added precision • Move -0.06 in the y direction to get the beam off of the pattern • This is for the first two structures out of four at that particular scratch • NPGS will show a scanned version of the structures and for fine alignment use the delta xy • For the next two structures • From the end of the scratch • Move -0.2 in the x-axis • Center the alignment mark • Move -0.3 in the x and 0.1 in the y • NPGS will show a scanned version of the structures and for fine alignment use the delta xy

  11. Development (Pads) • MIBK/ IPA 1:3 • 1 minute developing • 30 sec agitation • 30 sec still

  12. Physical Vapor Deposition (PVD) for Pads • Sputter Al Pads: • 50 Watts on both Axial and Flex Guns • Deposition pressure: 8 mTorr, • Argon gas flow rate: 25.5 Sccm • Al – 25minutes • ~ ?nm deposition thickness • Sputter Cr/Au Pads: • 50 Watts, 8 mTorr, 25.5 Sccms • 6:15 -> 25nm Cr • 5:30 -> 75nm Au

  13. Lift Off (Pads) • Sonication w/ Acetone • Sonicate until sample is clean there is no designated time • Clean w/ AIM (Acetone, IPA, Methanol) wash

  14. Spin-On (Windows) • Wafer should be cleaned at wet bench with AIM protocol • Prior to spin-on wafer oxide thickness should be verified with the nanospec • Pre-heat sample for approximately :90 seconds on hot plate @ 180°C • 40% PMMA 495 C4 – Recipe 8 @ 3000RPM: ≈ 45nm thickness • Bake @ 180°C on hot plate for 5 minutes • Nanospec to verify film thickness

  15. Exposure (Windows) • Expose with Beam current ~8pA

  16. Develop(Windows) • Develop for 30 seconds • With hand agitation • Rinse with water and blow dry

  17. AFM (Windows) • 3 um scan of windows and create/update Traveler

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