Boron Diffusion in Silicon

1. Boron Diffusion in Silicon CEC Inha University Chi-Ok Hwang

2. Transient Enhanced Diffusion • Modeling dopant diffusion using Arrhenius turns out to be incorrect experimentally; • “+1” model: ① for sub-amorphizing implants, independent of both dose and implant temperature, that is, of the number of Frenkel pairs (Defects and Diffusion in Silicon Processing by Chen et al. in 1997,ibid by Giles et al. in 1997)) ② incorrect at very low dose, high mass or very high energy implants.

3. Transient Enhanced Diffusion • When the defect density is relatively small, the faster diffusing species can reach the surface before encountering the opposite type defect. • During annealing of higher energy or larger mass implants it is possible that vacancies may exist even after recombination.

4. I and V Example(Density Effect) When the defect density is relatively small, the faster diffusing species can reach the surface before encountering the opposite type defect.

5. I and V Example(Energy or Mass Effect) During annealing of higher energy or larger mass implants it is possible that vacancies may exist even after recombination Interstitials Peak : 200Å Vacancies Peak : 210Å Separation : 10Å Interstitials Peak : 100Å Vacancies Peak : 105Å Separation : 5Å

6. Initial Damage

7. Initial Damage

8. Transient Enhanced Diffusion • TED is nearly independent of the ion-implant damage for initial times and after some period the enhancement goes away ⇒ The excess interstitial concentration remains approximately fixed during TED and drops to its equilibrium value. ⇒ “rod-like” or “{311}” defects. • The amount of TED is larger at lower temperatures ⇒ The duration of TED is much shorter at higher temperatures.

9. Vacancy Mechanism

10. Kick-out Mechanism

12. Kick-out Mechanism(Zhu etc, PRB 54(7), 4741 (1996)

13. Interstitialcy Mechanism • Alippi etc, PRB 64, 075207 (2001) -B in a substitutional site -SiB complex -B into an interstitial position -B into the closest lattice site kicking out a SiI(silicon self-interstitial) (SiI diffuses away or stays bound to the boron atom) • Windl etc, PRL 83(21), 4345 (1999) • Sadigh etc, PRL 83(21), 4341 (1999)

14. Terms • Density-Functional based Tight-Binding Molecular Dynamics (DF-TBMD) • Tight-binding approximation: it is assumed that the electrons are tightly bound to the nuclei.

15. Interstitialcy Mechanism(Alippi etc, PRB 64, 075207, 2001)

16. Interstitialcy Mechanism(Alippi etc, PRB 64, 075207, 2001)

17. Interstitialcy Mechanism(Alippi etc, PRB 64, 075207, 2001)

18. Interstitial Sites

19. Sadigh etc, PRL 83(21), 4341 (1999)

20. Boron Interstitial Clusters

21. Boron Cluster Models

22. Vacancy Cluster Model

23. Coupled Diffusion