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This study presents a scheme for beam energy measurements in the International Linear Collider (ILC) using a magnetic spectrometer and synchrotron radiation. Geant simulation shows the energy resolution and the effect of mirrors on the energy distribution. The proposed detector design includes shielding and mirror parameters for improved energy resolution.
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NEW COMMENTS TO ILC BEAM ENERGY MEASUREMENTS BASED ON SYNCHROTRON RADIATION FROM MAGNETIC SPECTROMETER E.Syresin, B. Zalikhanov-DLNP, JINR R. Makarov-MSU K.Hiller, H.J. Schriber-DESY, Zeuthen
SCHEME OF MAGNET SPECTROMETER Scheme of magnetic spectrometer applied for ILC beam energy measurement.
GEANT SIMULATION Left SR fan spot edge R. Makarov E=250 GeV+50 MeV- blue histogram E=250 GeV-wight histogram SR fan left edge displacement xleft7-8 μm SR fan right displacement xright5-6 μm Simulated energy resolution 12 μm/50 MeV Required resolution 2.5 μm/50 MeV
SIZE OF SR DETECTOR Electron energy spread in bunch 25 m. Soft photon angle spread 12 rad at photon energy 20 keV and electron energy of 250 GeV. 750 m Fringe field in the magnetic rigidity at magnetic field variation of (Bl)/Bl ≈ 4∙10-2 600 m Interaction of hard SR photons with a vacuum pipe material became to additional SR at low energy and an increase of the SR fan horizontal size. 1mm. The horizontal width of active detector area has been comparable with 1 mm at registration of soft SR.
ELECTRON ENERGY SPREAD R. Makarov Comparison of SR spot edges for monochromatic electrons at E=250 GeV (red color) and electron energy spread of ±125 MeV at E=250 GeV (white color)
GEANT SIMULATION K.H. Hiller Multiplicity of photons radiated by an electron whihin spectrometer magnet, GEANT simulation Average number of photons radiated by one electron Average photon energy SR calculations <N>=(5/2·31/2)··eB/m·Lmag/c=4.8 =1/137. <E>=(8·31/2/45)·Ecr=3.6 MeV Ecr=0.66 Ee2(GeV)·B(T)=11.6 MeV- critical photon energy
PHOTON ENERGY SPECTRUM K.H. Hiller Energy of photons radiated within the spectrometer magnet
SR calculation Power density
REFLECTION MIRRORS FOR SOFT SR The application of mirrors permits to avoid the problems related to SR radiation protection however the installation of mirrors reduces the energy resolution at fixed coordinate resolution and detector position. Lam=40 m mirror-spectrometer magnet distance Lm-d=10 m mirror-detector distance
REFLECTION OF SOFT SR RADIATION BY MIRROR φmax (rad) ≈ 0.08/Eγ (keV)=4 mrad mirror critical angle at large atomic number Z and electron energy of 20 keV Dependence of Rh mirror reflectivity on photon energy. The mirror reflected surface is placed at angle of φ=3 mrad to beam axis.
DETECTOR SHIELDING AT MIRROR SCHEME The coordinate of left SR spot edge is equal to =8.3 cm. The coordinate of left hard SR spod edge corresponds to xSR=3.1 cm. The distance about Δx= 5 cm between soft SR channel and ILC beam pipe can be used for detector shielding and reduction of hard SR intensity. In this case we assume that before mirror the horizontal size of vacuum chamber pipe can be increased from 4 cm up 7 cm on a length of 40 m from middle of analyzed magnet. After mirror two special channels of length 10 m will be constructed to transportation of soft SR radiation to detector.
ENERGY RESOLUTION IN MIRROR SCHEME =1 ·10-4 at detector coordinate resolution of δx=2 µm. MIRROR PARAMETERS dmir25- 50 μm mirror thickness 0.6 mm vertical size of SR spot on mirror lmir=(LAM+La-m) 0.1/2φ=65 cm length of left mirror The mirror reflect soft SR generated inside analyzing magnet on length of 0.1 LMM30 cm at deflection angle of 0.1 /20.05 mrad.
MIRROR HEATING Mirror adsorption >50-100 keV μμ0·0/ 050-100 keV, μ05-10 cm2/g
PHOTON ENERGY LOSS IN MIRROR Photon energy losses in both mirrors at photon energy Q≈ N(ε/εcr)1/3 ·d∙(2lmir/Lam) μ0·dmir·0/ Total energy losses in mirror per bunch Q≈3N∙(2lmir/Lam) μ0·dmir·0≈3·1014 eV≈45 J N = 1011 is the number of hard SR -quants in the bunch, єcr= 11.4 MeV is the critical photon energy. Rh mirror ( =12.4 g/cm3, dmir=25 m) Energy losses in mirror per train Nbunch=4800 Q=NbunchQ≈200 mJ
CREMNIUM DETECTOR B.Zalikhanov Semiconductor SR detector scheme at sub μm resolution. Si Ge =2.3·105 Ohm·cm =47 ·cm =16 =12 rel=07 ns rel=0 250 μs rel -charge relaxation time
Si DETECTOR SIGNAL In Si detector pulse duration is defined by RCstr50 ns Cstr=0S/d1 nF-capacity of detector strip (S=2.5·10-5 m2, d=3 m) R=50 -resistance of amplifier Amplification conversion 50 V/1 nC V1.5 V at number of electrons of 1.5·108
DETECTOR NOISE B. Zalikhanov Voltage fluctuation caused by heating noise ΔN – number of charge particles in detector strip Minimal -quanta energy required for production of signal larger than heating noise W=ΔNE= Ji·(kTC)1/2/e 50 keV Ji=3.6 eV energy required for e-hall pair production Resolution related to current noise W2Ji Nc1/2 ·(rel/c)1/260 keV Nc106 - number of free charges in Si (nsi=1.1·1010 cm-3), cd/-E2·10-10 s - time of free charge collection on strip electrodes at -=1.3 cm2/(V·s), E=1 kV/cm Ratio of heating and current noises to photon energy per strip (W2+W22)1/2/NE10-5 N=106 - number of photon with energy of E10 keV per strip
GAS AMPLIFICATION DETECTOR B. Zalikhanov Amplification coefficient N/N010-100 N=N0exp (dc-a) P=50-100 Atm, dc-a2 mm cathode anode distance 10-20 cm-1 Taunsend coefficient P in Torr, B=30·10-3 V-1, E=V/d0.5 kV/cm Ean/E10 electric field near anode (10-15 m) Number of soft photons at E10 keV per strip N 106 Number of secondary electrons per strip Ne108 After amplification at K=10 Ne109 The signal at amplifier conversion of 5 V/1 nC V1.5 V
Conclusion The position measurements of both horizontal edges for SR fan permits to determine the beam energy with a resolution of E/E 5∙10-5. The energy resolution obtained in GEANT simulations corresponds to 12μm/50 MeV at electron energy of 250 GeV. The scaling sensitivity 12μm/50 MeV at electron energy of 250 GeV permits to reach the energy resolution of ΔE/E ≈5∙10-5 at spatial resolution of 2-3 μm. A high position resolution detectors (2-3 μm) for a low energy gamma registration within large radiation background are proposed. Detector production may be carried out by methods used in the microelectronic industry.