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Status of the UK active pixel collaboration. APS2 Source measurements Without epi layer (APS3) First radiation test result(s) Summary & Outlook. APS2. Row decoder/control. 3MOS des. A. 4MOS des. A. CPA des. A. FAPS des. A. 3MOS des. B. 4MOS des. B. FAPS des. B. 3MOS des. C.
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Status of the UK active pixel collaboration • APS2 • Source measurements • Without epi layer (APS3) • First radiation test result(s) • Summary & Outlook Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
APS2 Row decoder/control 3MOS des. A 4MOS des. A CPA des. A FAPS des. A 3MOS des. B 4MOS des. B FAPS des. B 3MOS des. C 4MOS des. C CPA des. B FAPS des. C 3MOS des. D 4MOS des. D CPA des. C Columnamplifiers FAPS des. D Column decoder/control 3MOS des. E 4MOS des. E FAPS des. E 3MOS des. F 4MOS des. F CPA des. D 5.8 mm Design: R. Turchetta (RAL) • 4 pixel types, various flavours • Std 3MOS • 4MOS (CDS) • CPA (charge amp) • FAPS (10 deep pipeline) • 3MOS & 4MOS: 64x64, 15m pitch, 8m epi-layer MIP signal ~600 e- Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
APS2 3&4MOS: Various flavours Des. F Like C but with gate-all-around transistors Like E but with p-well as small as possible Like B but with gate-all-around transistors Like B but with four diodes in parallel Des. E Like B but with p-well as small as possible Des. D Like A but with gate-all-around transistors Des. C Like B but with gate-all-around transistors Like A but the TX transistor has lower Vt Des. B Like A but with smallest diode (1.2*1.2 m) Like A but the TX transistor has higher Vt Reference pixel (diode ~ 3*3 m) Des. A Like 3MOS-A but with the TX transistor 3_4MOS output 3MOS 4MOS Production error Gain too low Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
APS2: Source test • Here only use 3MOS and 4MOS (no CDS) • Calculate pedestals • Average output after removing hits • Calculate common mode noise • Average pixel type output after pedestal subtraction • Calculate random noise • Sigma of pedestal and common mode corrected output • Cluster definition • Signal >8 seed • Signal >2 next Fixed set up problem w.r.t. Paris meeting. Noise down by 50% as expected. Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
APS2: Some Clusters Number of pixels in a “3x3” cluster Cluster in S/N Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
APS2: Cluster signals Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
APS2 3&4 MOS summary • Out of 12 substructures 7 display good S/N. • Two structures problems in fabrication. • 4MOS GAAs have too low S/N for MIPs. • Bad pixels: 1-2% • Need test beam experiment. Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
APS3: std 3MOS Cluster in S/N • Designed in TSMC 0.25m Mixed Signal CMOS. • Diode 1.2*1.2 m • No epi-layer • Large clusters • Large signals Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
APS3: std 3MOS source test • Huge cluster size • Large signals • Fit does not describe data very well (5x5 clusters) but most probable value reasonable • S/N3x3=30.7±0.8 • S/N5x5=37±2 Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
First results irradiation test • Irradiated chips up 1015 p/cm2 • So far only time to test 1 chip at 1014 p/cm2, but…chip still alive!! • 3MOSE (3MOS 4 diodes is parallel) still behaves well. Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
Conclusions • APS2 contains 12 3&4MOS structures. • 7 yield good S/N in source tests (S/N=18-25) • 2 have fabrication problem • 3 4MOS GAAs have too low S/N for MIPs • APS3 has no epi-layer • Yields large clusters • Very high S/N (for 5x5 clusters S/N=37±2) • First irradiation test result: • 3MOSE (4 parallel diodes) still working well after 1014p/cm2 • More irradiation test results to come. • Need test beam to measure efficiency. Outlook Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
Radiation test Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004
Radiation test (II) Jaap Velthuis (University of Liverpool) ECFA04 September 1 2004