Corial D250

1. Corial D250 A PECVD Equipment For High Quality Film Deposition

2. Equipment Control & Software COSMA Software with: • Edit menu for process recipe edition, • Adjust menu for process optimizing, • Maintenance menus for complete equipment control and service via internet with VPN (Virtual Private Network). • CORS Software for: • Data reprocessing (Measures and data comparison).

3. Server for GUI Operator COSMA Controller Lots Actions Monitoring COSMA Supervisor Remote GUI Monitoring Process Process Controller Embedded control PU Constructor Monitoring Actions Embedded control function Device Controllers PC User Closed-loop Physical devices A Tool Organized in Successive Levels

4. Diagram Modes Optimization Mode Stand-by Mode Production Mode Normal Shut down Mode Step by step Mode Errors Operator Production Constructor Mode Maintenance Constructor

5. WAN VPN ADSL Fix IP COSMA GUI Firewall Customer Ethernet Network Dedicated Ethernet network COSMA Supervisor Ethernet Process Control Unit (2) Process Control Unit (1) Ethernet Device Control (1) Device Control (2) A Communicant Tool

6. Match Box Reactor TMP Shuttle Lift Gas Box TMP Control RF Generator System

7. Match Box Gate valve Process pumping port Lift TMP Electronic control Gas box System

8. Cathode (Gas inlet) Shuttle Lift Compressed Air TMP Principle of PECVD Reactor Vacuum Chamber

9. Cathode (Gas inlet) Shuttle Lift Compressed Air TMP Principle of PECVD Reactor Vacuum Chamber

10. Heating cable Cathode (Gas inlet) Infra-red reflectors Compressed Air Process pump TMP Principle of PECVD Reactor Vacuum Chamber Shuttle Lift

11. Laser Interferometer RF Match Heating cable Cathode (Gas inlet) P L A S M A Infra-red reflectors Compressed Air Process pump TMP Principle of PECVD Reactor Vacuum Chamber Shuttle Lift

12. PUMPING PRINCIPLE of PLASMA REACTOR Gas inlet Pumping ring Vertical pipes Low half pumping ring Process pump

13. Symetricalreactor for low stress deposition Shuttle Up Pumping pipe Shuttle Down Process pump Reactor

14. Reactor Shuttle in Up position Shuttle in Down position Penning gauge Process pump Lift

15. Symetrical pumping Process pump Lift Reactor

16. Standard PECVD Pressurized reactor P2 Cathode PLASMA PLASMA P1 300°C Anode Cold walls Roots TMP TMP P1 >> P2 No film contamination Outgasing from the cold walls leads to film contamination REACTOR PRINCIPLE

17. Walls at 300°C Close gate valve Roots TMP CLEANING PRINCIPLE

18. Gas inlet P2 Leaks Send N2 P1 Gate valve closed Roots TMP N2 goes in process chamber through the leaks CLEANING PRINCIPLE P2 >> P1

19. Gas inlet P2 300°C Send N2 P1 P1 Gate valve closed Roots TMP P2 >> P1 No fluorine atoms can go in the process chamber. No corrosion of vacuum vessel. CLEANING PRINCIPLE

20. A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals. Monitoring Deposition The latest submicron technology needs precise monitoring: • Automatic endpoint detection, • CCD camera with magnification = 50 X, • Laser beam diameter ≤ 50 m.

21. Precise thickness of deposited layers • In situ monitoring of deposition rate • The plasma confined in a uniformly heated process chamber • Excellent uniformities in thickness and refractive index. • Symetrical design of the process chamber • Stress control of films. • In situ plasma cleaning with no corrosion of the process chamber. • No memory effect • No mechanical cleaning BENEFITS

22. Development is carried out through Design of Experiments (DOE) • Optimisation of film properties: • deposition rate, • refractive index, • uniformities (Thickness, Index), • KOH, TMAH, etch rates, • stress, • breakdown voltage. Customer Benefit Process modelization enables fast matching with customer requirements. Process Development Guaranteed Process Results

23. Some Process Specifications Guaranteed Process Results

24. Refractive Index = 2 Si3N4 Refractive Index Refractive Index Versus SiH4 and NH3 Flow Rates

25. Si3N4 Film Properties Stress Versus SiH4 and NH3 Flow Rates Stress = -100 MPa KOH Rate = 50 Å/h KOH Etch Rate Versus SiH4 and NH3

26. Zero stress area Si3N4 Film Stress Stress Versus SiH4 and NH3 Flow Rates

27. SiO2 Refractive Index Refractive Index and RI uniformity versus pressure and N20 flow rate Refractive Index = 1.4570 ± 0.0005 RI uniformity = ± 0.0005

28. Stress = - 50 MPa BOE Rate < 250 nm/min SiO2 Film Properties Stress Versus Pressures and N2O Flow Rate BOE Etch Rate Versus Pressure and N2O

29. SiO2 Breakdown Voltage Breakdown Voltage Versus Pressure and SiH4 Breakdown Voltage = 10 MV/cm

30. This gives rise to: • Repetitive film growth, • Good adhesion of films on substrate, • Stable film properties. Multi-step process recipes enables perfect and stable plasma ignition. • This gives rise rise to: • No contamination of deposited films, • Shorter plasma cleaning, • No pinhole. Process is terminated by an Ar or He plasma in order to scavenge the powders electrostatically trapped in the plasma. Process Performance Guaranteed Process Results

31. Corial D250 Description

32. Corial PECVD Features • Very high quality of deposited films: • Tunable refractive index • Low etch rates in BOE and KOH • High breakdown voltage • No pinholes • Excellent uniformities (thickness & refractive index) • Stress control of films from tensile to compressive • Efficient in situ plasma cleaning with NO corrosion of vacuum vessel, NO memory effect and NO manual cleaning required.