Corial 200ML

1. Corial 200ML Microwave High Density Plasma Etcher For Compound Semiconductors

2. Corial 200ML

3. Equipment Control & Software COSMA Software with: • Edit menu for process recipe edition, • Adjust menu for process optimizing, • Maintenance menus for complete equipment control via internet with VPN (Virtual Private Network). • CORS Software for: • Data reprocessing (Measures and data comparison).

4. Server for GUI Operator COSMA Controller Lots Actions Monitoring COSMA Supervisor Remote GUI Monitoring Process Process Controller Embedded control PU Constructor Monitoring Actions Embedded control function Device Controllers PC User Closed-loop Physical devices A Tool Organized in Successive Levels

5. Diagram Modes Optimization Mode Stand-by Mode Production Mode Normal Shut down Mode Step by step Mode Errors Operator Production Constructor Mode Maintenance Constructor

6. WAN VPN ADSL Fix IP COSMA GUI Firewall Customer Ethernet Network Dedicated Ethernet network COSMA Supervisor Ethernet Process Control Unit (2) Process Control Unit (1) Ethernet Device Control (1) Device Control (2) A Communicant Tool

7. System Magnetron Isolator Reactor HT/BT Power Supplies Load-lock Electronic Control TMP Control UHF Generator RF Generator

8. System Magnetron Isolator Matching Network Load-lock Throttle Valve TMP Lift Gas box

9. Gate valve for quick reactor venting and cleaning Dry Pump ADP 122 Pumping System Reactor Load-lock Load-Lock Valve TV TMP

10. Reactor Features (1) • New microwave (2.45 GHz) plasma source with hot walls to reduce polymer condensation and to enhance plasma cleaning. It produces High Density Plasma in a wide working pressure range (10 to 100 mT) for fast etching of up to Ø200 mm wafers, • Helium assisted heat exchange between cathode, shuttle and wafer with mechanical clamping to maintain wafer temperature below100°C, Numerous plasma modes accessible in the same process: • Microwave High Density Plasma + RF biasing • Reactive Ion Etching • Microwave High Density Plasma for ultra-soft etching.

11. Reactor Features (2) • Reactor with hot walls enables: • Highly selective processes, • Low contamination of the process chamber. Very low plasma potential (< 2 Volts) and automatic self bias regulation giving rise to precise control of low ion energy levels (< 15 eV), • No damage etching with no RF biasing, • Isotropic etching with low RF biasing, • Anisotropic etching with high RF biasing.

12. Magnetron Coupling Microwaves 2.45 GHz PLASMA High Density Plasma Source Device Electron density : 1011 to 1012 e/cm3

13. Laser window Reactor Coupling device HDP Reactor Design

14. Laser window Gas shower (Thermally isolated) Microwave cavity Quartz tube and shielding (Thermally isolated) Coupling device HDP Reactor Design Reactor walls are thermally isolated. They are getting hot during etching. This reduces the polymer condensation and the cross contamination between different processes.

15. Shuttle Loading tool Cathode Loading

16. Shuttle Loading tool Cathode Loading

17. Shuttle Loading tool Cathode Clamping

18. Shuttle Loading tool Cathode Helium Cooling

19. PLASMA Shuttle Loading tool Cathode Helium Etching

20. Shuttle Loading tool Cathode End of Etching

21. Shuttle Loading tool Cathode Unloading

22. Shuttle Loading tool Cathode Unloading

23. Goal: Ensure wafer cooling Altymid Ring Wafer Work Area Pression He en fonction du débit - He Pressure Versus He Flow Rate - 15 Graphite Plate 10 Pression He (Torrs) - He Pressure - O’ Ring 5 0 0 Base Plate 0 0 5 10 15 20 25 Débit He - He Flow Rate - (sccm) He Pressure vs He Flow Rate Example of Shuttle The shuttles are designed according to wafer size, number of wafers and process recipes for optimum process results. The use of dedicated shuttles according to process strongly reduces the cross contamination.

24. A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals. Precise Monitoring The latest submicron technology needs precise monitoring: • Automatic endpoint detection, • CCD camera with magnification > 120 X, • Laser beam diameter ≤ 20 m.

25. Signal Laser beam Photodiode Time Interferences Reflected beam 1 Interface 1 Interface 2 Reflected beam 2 Refractive Index = n Underlayer Laser Endpoint Detection Interferences lead to a periodic signal having a l/2n period versus time

26. Recap of Corial 200ML Features • New microwave source with hot walls which reduces polymer condensation, enhances plasma cleaning, minimizes cross contamination. It produces High Density Plasma for uniform etching of films on batch of seven 2” wafers or wafer size up to 200 mm, • Very low plasma potential (<2 Volts) and automatic self bias regulation to precisely control the ion energy, • Helium assisted heat exchange to maintain resist and device integrity, • Various shuttles to reduce cross contamination. They are designed to fit with wafers and processes recipes for the best process results, • Wide process range from isotropic to anisotropic and fast etch rate to low etch rate with very high selectivity, • Laser endpoint for precise process monitoring, • Capability of many etching modes from RIE, HDP + RIE and HDP in the same process recipe.