1 / 16

Backside Device Irradiation for Single Event Upset Tests of Advanced Devices

Backside Device Irradiation for Single Event Upset Tests of Advanced Devices. Gary M. Swift Jet Propulsion Laboratory/ California Institute of Technology. SEE Symposium Session E: Testing and Facility April 25, 2002.

ashtyn
Download Presentation

Backside Device Irradiation for Single Event Upset Tests of Advanced Devices

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Backside Device Irradiation for Single Event Upset Tests of Advanced Devices Gary M. Swift Jet Propulsion Laboratory/ California Institute of Technology SEE Symposium Session E: Testing and Facility April 25, 2002 The work described in this presentation was conducted at the Jet Propulsion Laboratory, California Institute of Technology, under contract with the National Aeronautics and Space Administration. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not constitute or imply its endorsement by the United States Government or the Jet Propulsion Laboratory, California Institute of Technology.

  2. Acknowledgements Thanks to the following Radiation Effects Group members: • for the SDRAM data – Dr. Leif Scheick and Duc Nguyen • for PowerPC data – Farhad Farmanesh, Steve Guertin, • Dr. Farokh Irom, and Doug Millward • for technical support – Michael O’Connor, Mike Weideman, and • Peter Schrock • for general support – Allan Johnston

  3. Outline • Background: How and Why? • Review of two RADECS examples • SDRAM • PowerPC • “Interesting” examples • Pioneering data sets • Beam problems • Procedure problems • Conclusions

  4. Background: Why? Two reasons are: SDRAMs Flip-Chips picture source: http://www.motorola.com

  5. Background: How?

  6. Example results:

  7. RADECS example: SDRAM

  8. RADECS example: PowerPC

  9. Pioneering Example: Koga, Crain et al. Front-side Samsung 256Mb SDRAM

  10. Pioneering Example: Koga, Crain et al. Backside Samsung 256Mb SDRAM

  11. Pioneering Example: Koga, Crain et al. Front-side Backside

  12. Example: Beam Problems PowerPC G4

  13. Example: Procedure Problems 3 1 2 LET= ?? Upsets =29,200 LET= 7.6 Upsets =2,400 LET= 13 Upsets =10,000

  14. Conclusions • Texas A&M Wishlist: • - Upstream Degrader (for uniformity) • - LET and/or Energy Spectrum Detector • Backside thinning is NOT so easy • - Yield Problems • - Need Long-Range Ions • Backside Irradiation Requires Careful LET Assignments

  15. Pioneering Example: Henson et al.

More Related