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Silecs Product Presentation June 2005

Silecs Product Presentation June 2005. Silecs Spin-on Polymers, Use and Benefits. SLX28E : Organosiloxane SLX28D : Organosiloxane SLX24 ULK : Low-K Organosiloxane SG200 : Methylsiloxane P1DX : Low T cureable Organosiloxane ( in development ). Silecs SLX28E.

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Silecs Product Presentation June 2005

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  1. Silecs Product Presentation June 2005

  2. Silecs Spin-on Polymers, Use and Benefits SLX28E : Organosiloxane SLX28D : Organosiloxane SLX24 ULK : Low-K Organosiloxane SG200 : Methylsiloxane P1DX : Low T cureable Organosiloxane (in development)

  3. Silecs SLX28E

  4. SLX28E : Organosiloxane Polymer SLX28E polymer designed for: - High thermal stability - High mechanical properties - K ~ 3 - High single coat thickness cracking threshold - Sub-Al BEOL planarization and passivation layers - Aggressive, high aspect ratio feature fill - Low etch rate in aqueous HF - Film stability (no water absorption) - UV curable 1. Measured using MIS structure and Hg-probe. 2. Modulus & hardness based on Nanoindentation of >600nm thickness films. 3. 24-hour water immersion 4. Measured at 0.5MV/cm and 23 ºC 5. Furnace cure = 450 ºC for 3 hr

  5. SLX28E : Properties vs. Cure Method

  6. SLX28E : Film Properties vs. Furnace Cure T All cure times in this study are 1 hr. A ramp up to/from 200 ºC @ 10 ºC/min applied

  7. 350 C 500 C SLX28E : Local Planarization vs. Furnace Cure T All cure times in this study are 1 hr. A ramp up to/from 200 ºC @ 10 ºC/min applied Local planarization established during the coat and bake process. Cure temperature has no impact on planarization. SLX28E begins cross-linking at ~ 225 ºC. Once the film is cross-linked further thermal process have little effect on planarization.

  8. 450 ºC furnace cure for 1hr, SEM cross-section, 25:1 DHF wet etch for 60s SLX28E SLX28E PECVD SiO2 PECVD SiO2 Al (mostlyeteched) SLX28E SLX28E 750 ºC RTP cure for 5min, SEM cross-section, partially aqueous HF etch for 60s HF etched TEOS SLX28E Si3N4 SLX28E : Feature Fill & HF Resistance Topography formed by Al-line and cusped CVD SiO2 is used to simulate that found in advanced pre-metal dielectric (PMD) applications. Complete fill of a highly recessed 500nm wide space through a 10nm wide opening. The SLX28E within the recessed feature and narrow slot is completely resistant to 25:1 DHF No etching of the SLX28E within the TEOS trench features occurs with the partially aqueous HF wet etchant. The TEOS lines features are etched. No cracking or other film defects observed

  9. Silecs SLX28D

  10. SLX28D : Organosiloxane Polymer SLX28D polymer designed for: - Reduced furnace cure temperature and time - High sensitivity to UV cure (photo-crosslinking) - K < 3 - No silanol or water byproducts - Film stability (no water absorption) - Planarization & feature fill - Adhesion to dissimilar films - Low etch rate in aqueous HF 1. Measured using MIS structure and Hg-probe. 2. Modulus & hardness based on Nanoindentation of >600nm thickness films. 3. 24-hour water immersion 4. Measured at 0.5MV/cm and 23 ºC 5. Furnace cure = 450 ºC for 1 hr

  11. SLX28D : Properties vs. Cure Method

  12. SLX28D : Film Properties vs. Furnace Cure T All cure times in this study are 1 hr. A ramp up to/from 200 ºC @ 10 ºC/min applied

  13. SLX28D : Film Properties vs. UV Cure Temperature Films baked to 150 ºC prior to UV cure; all UV cure times are 5 min.

  14. 450 ºC furnace cure for 1hr, SEM cross-section, 25:1 DHF wet etch for 60s SLX28D PECVD SiO2 SLX28D Al SLX28D SLX28D SLX28D : High Aspect Ratio Gap Fill PECVD SiO2 Topography formed by Al-line and cusped CVD SiO2 is used to simulate that found in advanced pre-metal dielectric (PMD) applications. Complete and defect free fill of a highly recessed 500nm wide space through a 10nm wide opening. The SLX28D within the recessed feature and narrow slot is completely resistant to 25:1 DHF. 25:1 DHF test used for two reasons: a) test wet etch resistance of SLX28D within narrow high aspect ratio features, b) to delineate SLX28D fill from PECVD SiO2 and Al layers.

  15. Silecs SLX24 ULK

  16. SLX24 ULK : Organosiloxane Low-K Polymer SLX24 ULK polymer designed for: - Low k applications (k can be adjusted from 2.8 to 2.0; data within for k=2.5 film) - Low RI applications - Low % porosity for targeted k value - Small pore diameter - Short pore interconnection length - High mechanical properties at targeted k - Sensitivity to UV curing - Stability (no water absorption) 1. Measured using MIS structure and Hg-probe. 2. Modulus & hardness based on Nanoindentation of >600nm thickness films. 3. Pore Volume (%) estimation based on RI, EP and PALS data for k=2.5 film 4. 24-hour water immersion 5. Measured at 0.5MV/cm and 23 ºC 6. Cure = 300 ºC, 1hr + 525 ºC, 1hr

  17. SLX24 ULK : Properties vs. Cure Method

  18. SLX24 ULK : Film Properties vs. % Pore Monomer Normalized Conc. (%)  % Monomer component included in final polymeric structure for pore generation All samples furnace cured at 450 ºC for 1 hr

  19. SLX24 ULK : Pore Diameter & Interconnect Length Pore diameter Normalized Conc. (%)  % Monomer component included in final polymeric structure for pore generation

  20. SLX24 ULK : Film Properties vs. Cure Temperature Std furnace cure  1 hour at given temp Alt furnace cure  1 hour 300 ºC hold + 1 hour at given temp with

  21. Silecs SG200

  22. SG200 : Methylsiloxane Polymer SG200 polymer designed for: - Partial and total etchback planarization processes - Sub-Al IMD layer, BPSG leveling - Defect free fill of features as narrow as 200nm in width - Low cost - K ~ 4 - Adhesion to underlying and capping dielectric layers - Robust to material aging (good shelf life resilience) - SG300 available (~320nm @ 3000 rpm) 1. Measured using MIS structure and Hg-probe. 2. Measured at 0.5MV/cm and 23 ºC 3. Cure = 425 ºC for 1 hr 4. Double coated film (thickness ~ 450nm)

  23. SG 200 Spin-on Glass 100nm CVD SiO2 Liner 900nm High Molybdenum Lines (varying line and space width) SG200 : Planarization – Double Coat Planarization : Double Coat (Cured Film Thickness = 500 nm) Defect free fill of 900nm high line structures Cure temperature within range studied has minimal impact on feature planarization

  24. line spacing: 370 nm line spacing: 290 nm Test Structure: 650nm High CVD TEOS SiO2 Line Slot Structures Void Free Fill Observed for Line Feature Aspect Ratios > 2 SG200 : Planarization – Single Coat Planarization : Single Coat (Cured Film Thickness = 250 nm) The 900nm high 1:0.75 pitch metal line feature is ~50% planarized by a 250nm thick film of SG200 No film remains on top of the metal line feature

  25. The refractive index and leakage current data indicate that the optimum cure temperature is > 400 °C SG200 : Film Properties vs. Cure Temperature All samples furnace cured in N2 for 1 hr with a 200 ºC ramp to/from target cure temperature

  26. Non-Aged Sample Sample aged at 22 °C for 41 days SG200 : Planarization vs. Material Aging Samples aged to 9 days at 40 ºC and 41 days at 22 ºC No change in the planarization capability of the SG200 film noted as a result of both aging tests Minimal to no change in other masurable film properties (thickness, refractive index, dielectric constant) noted as a result of material aging

  27. Silecs P1DX (Experimental Product)

  28. P1DX : Low Temperature Cure Siloxane P1DX Siloxane polymer design goals: - Fully cured at temperature of ~ 200 ºC - Excellent adhesion to a variety of substrates (SiO2, polyimides, acrylates, … ) - Ability to control coat polymer properties to permit conformal to non-conformal coating - Stable, passivation film, excellent moisture barrier - For application of interest, RI required to be between 1.4 and 1.6 in the visible range P1DX is still under development for applications in the CMOS Sensor technology, other optics applications, MEMS, areas where low temperature cure are required.

  29. P1DX : Summary of Results to Date (polymer A) • Optical properties: • Index of refraction = 1.45 @ 632.8nm • Extinction co-efficient = 0 @ 632.8nm • Polymer is fully cross-linked after a 150 oC (5min) or 150 oC (5min) + 200 oC (60min) cure; N2 ambient • Polymer contains some residual silanol groups after both tested cure procedures • Bake conditions need to be optimized • Scored Scotch tape adhesion test to silicon and SiO2: • 150 oC => poor • 150 oC + 200 oC => good • Chemically and optically stable against hot water soak test (sample immersion in a 75 ºC water bath for 5 min)

  30. P1DX : Summary of Results to Date (polymer B) • Optical properties: • Index of refraction = 1.41 @ 632.8nm • Extinction coefficient = 0 @ 632.8nm • Polymer is fully cross-linked after a 150 oC (5min) or 150 oC (5min) + 200 oC (60min) cure; N2 ambient • Polymer contains minor residual silanols after 150 oC cure, but is completely silanol free after the 150 oC + 200 oC cure • Minor cure condition optimization needed • Scored Scotch tape adhesion test to silicon and SiO2: • 150 oC => poor • 150 oC + 200 oC => good • Chemically and optically stable against hot water soak test (sample immersion in a 75 ºC water bath for 5 min)

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