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MC Simulation of Silicon Pixel Detector

MC Simulation of Silicon Pixel Detector. Jianchun Wang Marina Artuso Syracuse University 11/06/00. Track. e -. E. Readout Signal Simulation. Energy deposition by charged track along its path length, and production of electron/hole pairs

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MC Simulation of Silicon Pixel Detector

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  1. MC Simulation ofSilicon Pixel Detector Jianchun Wang Marina Artuso Syracuse University 11/06/00

  2. Track e- E Readout Signal Simulation • Energy deposition by charged track along its path length, and production of electron/hole pairs • Electron clouds drifting towards readout pixel in electric field (corresponding to doping and bias voltage applied) • Electron cloud spread due to diffusion • Magnetic field deflection (our sensors will be in dipole field of 1.6 T) • Realistic front end electronics (noise, threshold, digitization accuracy) Syracuse University

  3. Energy Deposition • Density effect: d • At high bg, radiative losses need to be considered (+7%) • Thin material (280mm silicon):  = 5.0 keV,  / I0 = 29 227 GeV/c p Syracuse University

  4. Production of d-ray • Number of d-ray: <N>  0.5 (Tcut=10 keV, d=280 mm) • Kinetic energy according to dN/dT • Polar angle q is calculated • Azimuthal angle f generated isotropically Syracuse University

  5. Ionization of d-ray • The d-ray range is calculated • The length of d-ray Survival probability function • Ionization uniformly • d-ray escape (only 1/4 of energy collected) Syracuse University

  6. Excitation and Ionization • Urbán model (thin material: x/I = 29 for 280mm silicon) • Excitations: E1 E2 Ionization: E3 • Cross-sections • dE/dx: C· (1-r) for excitation and C·r for ionization Syracuse University

  7. Total Charge Landau function Total Charge (ke) Syracuse University

  8. Z 0 V 0 V n+ p+ n+ on n n n p+ on n p+ n+ EZ -V +V Electric Field Syracuse University

  9. Mobility Vapplied = 140 V Vdepletion = 85 V d = 280 mm T = 300 K Syracuse University

  10. Magnetic Field Syracuse University

  11. Charge Cloud Spread • Radius of ionization trail: R = hc bg / I (~2mm) • Diffusion: D = kTm / q, sX = sY = sqrt(2Dt) Syracuse University

  12. Electronics • Noise (preamplifier, ADC) • Non-uniform threshold • Gain uncertainty • ADC precision Syracuse University

  13. Cluster Algorithm • Similar as test beam offline analysis • Plan: study overlapped cluster • This might also improve the resolution by reducing the effect of d-ray Syracuse University

  14. Charge Sharing Fraction of Cluster (row) size FPIX0 CiS p-stop Qth = 2500 e- Vbias= -140V Vdepl= -85V Measurement Simulation Syracuse University

  15. Large Size Cluster FPIX0-pstop Simulation has less large size cluster than measurement Source ? Syracuse University

  16. Measurement Simulation Charge Sharing Fraction of Cluster (row) size FPIX1 Seiko p-stop Qth = 3780 e- Vbias= -75V Vdepl= -45V Syracuse University

  17. Reconstruction Linear h correction applied Xresidual = Xtrack - Xrecon Syracuse University

  18. FPIX0 p-stop FPIX1 p-stop Resolution vs angle • No track projection error subtracted from the measurement • Resolution distribution agrees with simulation • Binary resolution degraded from 8-bit ADC Syracuse University

  19. Summary • New version simulation program works quite well • There are not much can be tuned • Plug the code into BTeV simulation • Two approaches need to be evaluated • Use GEANT simulation in energy deposition • Use the energy deposition simulation of this program Syracuse University

  20. Beam Test Track Angle Precision of the alignment is about 0.1 (i.e. Four runs of FPIX1 P-spray at 15: 15.16, 15.22, 15.25, 15.16) Syracuse University

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