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Comparison standard and graded substrate, simulation with ISE-TCAD

Comparison standard and graded substrate, simulation with ISE-TCAD. Andrei Dorokhov, May 14 , 2007. Doping profiles and the geometry. Standard (uniformly doped) substrate. Doping profiles and the geometry. Graded (linearly doped) substrate.

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Comparison standard and graded substrate, simulation with ISE-TCAD

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  1. Comparison standard and graded substrate, simulation with ISE-TCAD Andrei Dorokhov, May 14 , 2007 Andrei.Dorokhov@IReS.in2p3.fr

  2. Doping profiles and the geometry Standard (uniformly doped) substrate Andrei.Dorokhov@IReS.in2p3.fr

  3. Doping profiles and the geometry Graded (linearly doped) substrate Andrei.Dorokhov@IReS.in2p3.fr

  4. Particle energy loss distribution and one pixel geometry Backplane One pixel layout Pepi Backplane SiO2, 1nm Nepi Energy deposition Nwell Electron, 2keV Pwell TOX Andrei.Dorokhov@IReS.in2p3.fr

  5. Electrons collection Standard and Graded Electrons density (saturated color scale, in the n-well the actual density much larger) Andrei.Dorokhov@IReS.in2p3.fr

  6. Results Andrei.Dorokhov@IReS.in2p3.fr

  7. Conclusions • Charge collection in the graded substrate much faster (~10 times), and in the order of 16-23 ns • In the graded substrate the charge collection in 5x5 cluster smaller by 20% but in the seed pixel ~5 times larger -> much smaller spread Andrei.Dorokhov@IReS.in2p3.fr

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