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TEST BEAM RESULTS OF A LARGE AREA STRIP DETECTOR MADE ON HIGH RESISTIVITY CZOCHRALSKI SILICON

TEST BEAM RESULTS OF A LARGE AREA STRIP DETECTOR MADE ON HIGH RESISTIVITY CZOCHRALSKI SILICON. Helsinki Institute of Physics , CERN/EP, Switzerland Microelectronics Centre, Helsinki University of Technology, Finland Okmetic Ltd., Finland Ioffe PTI, Russia Brookhaven National Laboratory, USA

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TEST BEAM RESULTS OF A LARGE AREA STRIP DETECTOR MADE ON HIGH RESISTIVITY CZOCHRALSKI SILICON

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  1. TEST BEAM RESULTS OF A LARGE AREA STRIP DETECTOR MADE ON HIGH RESISTIVITY CZOCHRALSKI SILICON Helsinki Institute of Physics, CERN/EP, Switzerland Microelectronics Centre, Helsinki University of Technology, Finland Okmetic Ltd., Finland Ioffe PTI, Russia Brookhaven National Laboratory, USA Univesity of Hamburg, Germany Accelerator Laboratory, University of Jyväskylä, Finland CERN RD39 & RD50 Eija Tuominen Siena 22.10.2002

  2. OUTLINE • Czochralski grown silicon • Wafer characteristics • Device processing • Test beam results • Conclusions Eija Tuominen Siena 22.10.2002

  3. WHY CZ-Si AS A DETECTOR SUBSTRATE • Radiation hardness • * Oxygen increases the radiation hardness of silicon detectors • * Cz-Si intrinsically contains oxygen, 1017-1018 cm-3 • Cost-effectiveness • * Cz-Si wafers are cheaper than traditional Fz-Si wafers • * Large area wafers available -> possibility for large detectors -> cost-effectiveness for front-end electronics, interconnection and module assembly Eija Tuominen Siena 22.10.2002

  4. WHY CZ-Si AS A DETECTOR SUBSTRATE II 3. High oxygen concentration allows some additional benefits * Depletion voltage of detectors can be tailored by adjusting a) oxygen concentration in the bulk b) thermal history of wafers (Thermal Donor killing) WHY NOT BEFORE? * No demand for high resistivity Cz-Si -> No availability * Price for custom specified ingot 15,000 € - 20,000 € * Now RF-IC industry shows interest on high resistivity Cz-Si (=lower substrate losses of RF-signal) * Cz-Si of resistivity 5kcm reported: T.Abe and W.Qu, High resistivity CZ silicon for RF applications substituting GaAs”, Electrochemical Society Proc. Vol. 2000-17 (2000) 491-500. Eija Tuominen Siena 22.10.2002

  5. WAFER CHARACTERISTICS * 4” single side polished * nominal resistivity 900 cm * thickness 380 um * orientation <100> * oxygen concentration <10 ppma * grown by magnetic Czochralski method (MCZ) -> oxygen concentration is ”low” and well controlled Eija Tuominen Siena 22.10.2002

  6. DEVICE PROCESSING Simple fabrication process: 4 Lithographies 2 Ion implantations 2 Thermal dry oxidations 3 Sputter metal depositions Large area detectors: A=32.5 cm2 IL(900 V) = 3 uA Vfd = 420 V (380 um) Eija Tuominen Siena 22.10.2002

  7. HELSINKI SILICON BEAM TELESCOPE (hardware) * Situated at the CERN H2 beam * eight silicon strip detectors * front-end electronics with VA1 chips Eija Tuominen Siena 22.10.2002

  8. HELSINKI SILICON BEAM TELESCOPE(software) * Analog to Digital Converter with programmable DSP * PC based data acquisition with on-line monitoring * Separate off-line analysis Eija Tuominen Siena 22.10.2002

  9. BEAM TEST RESULTS Resolution  10 um Efficiency  95 % Signal/Noise  10 Eija Tuominen Siena 22.10.2002

  10. CONCLUSIONS Full size (32.5 cm2) Cz-Si strip detectors were processed Electrical performance: Depletion voltage 420V Leakage current  3A@900V No breakdown under 900V Detector performance: Resolution  10 um Efficiency  95 % S/N  10 Radiation hardness: being tested by gamma, proton and neutron beams Eija Tuominen Siena 22.10.2002

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