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Explore the challenges and solutions for developing radiation-hard sensors for the BeamCal of the International Linear Collider, focusing on materials like CVD diamond, silicon, GaAs, and SiC. Learn about the properties, characteristics, and performance of diamond as a sensor material.
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Radiation Hard Sensors for the BeamCal of the ILC C. Grah FCAL Collaboration 10th ICATPP Conference, Villa Olmo
Contents • The ILC and the very forward region of the detectors for the International Linear Collider • BeamCal – requirements • Radiation hard materials under investigation: • CVD diamond • Silicon • GaAs and SiC • Conclusions C.Grah: Radhard Sensors for BeamCal
The International Linear Collider ILC ~ 30 km Parameters of the ILC: • e+e- accelerator, sc cavities, gradient 31.5 MV/m => 30km long • CMS energy: 200 to 500 GeV (possible upgrade to 1 TeV) • One interaction region, beam crossing angle of 14mrad and two detectors („push-pull“ scenario) • Peak luminosity: 2 x 1034 cm-2s-1 • typical beam size: (h x v) 650 nm x 5.7nm & beam intensity 2 x 1010 e+e- C.Grah: Radhard Sensors for BeamCal
Very Forward Region of the ILC Detectors LumiCal • R&D of the detectors in the forward region is done by the FCAL Collaboration. • Precise (LumiCal) and fast (BeamCal) luminosity measurement • Hermeticity (electron detection at low polar angles) • Mask for the inner detectors • Not shown here: GamCal, a beamstrahlung photon detector at about 180m post-IP. TPC HCAL BeamCal ECAL C.Grah: Radhard Sensors for BeamCal
The Beam Calorimeter - BeamCal BeamCal LDC Interaction point ~10cm ~12cm • Compact EM calorimeter with sandwich structure: • 30 layers of 1 X0 • 3.5mm W absorber and 0.3mm radiation hard sensor • Angular coverage from 5mrad to 28 mrad (6.0 > |η| > 4.3) • Moliére radius RM ≈ 1cm • Segmentation between 0.5 and 0.8 x RM Space for electronics C.Grah: Radhard Sensors for BeamCal
The Challenges for BeamCal e+ e- e+ e- γ Interaction γ e- e- e.g. Breit-Wheeler process Creation of beamstrahlung at the ILC • e+e- pairs from beamstrahlung are deflected into the BeamCal • 15000 e+e- per BX • => 10 – 20 TeV total energy dep. • ~ 10 MGy per year strongly dependent on the beam and magnetic field configuration • => radiation hard sensors • Detect the signature of single high energetic particles on top of the background. • => high dynamic range/linearity ≈ 1 MGy/a ≈ 5 MGy/a C.Grah: Radhard Sensors for BeamCal
Diamond as Sensor Material • Manufacturing of diamond has become more and more available. CVD deposition of polycrystalline diamonds is available at wafer scale (3”-6” diameter) Properties: Diamond Silicon Hardness* 10,000 kg/mm2 1100 kg/mm2 Density 3.52 g/cm3 2.33 g/cm3 Atom density* 1.77 x 1023 1/cm3 0.50 x 1023 1/cm3 Thermal expansion coefficient 1.1 ppm/K 2.6 ppm/K Thermal conductivity* 20.0 W/cmK 1.412 W/cmK Dielectric strength 10 MV/cm 0.3 MV/cm Resistivity 1013 - 1016Ωcm 2.3 x 105Ωcm Electron mobility 2,200 cm2/Vs 1350 cm2/Vs Hole mobility 1,600 cm2/Vs 480 cm2/Vs Bandgap 5.45 eV 1.12 eV Energy/eh-pair 13eV 3.62 eV Av. eh/100μm (MIP) 3600 7800 *highest value of all solid materials (diamond values from Fraunhofer IAF webpage) C.Grah: Radhard Sensors for BeamCal
Polycrystalline Chemical Vapour Deposited Diamonds (courtesy of IAF) • pCVD diamonds are an interesting material: • radiation hardness (e.g. LHC pixel detectors) • advantageous properties like: high mobility, low εR = 5.7, thermal conductivity • availability on wafer scale • Samples from two manufacturers are under investigation: • Element SixTM • Fraunhofer Institute for Applied Solid-State Physics – IAF • 1 x 1 cm2 • 200-900 μm thick (typical thickness 300μm) • Ti(/Pt)/Au metallization (courtesy of IAF) C.Grah: Radhard Sensors for BeamCal
IV Characteristics • Typical current-voltage characteristics of a good pCVD diamond. • No breakthrough up to 500V. • Very low currents of a few picoamperes. • Symmetric (linear) behavior (ramping up) • Hysteresis observed for all pCVD samples (ramping down). C.Grah: Radhard Sensors for BeamCal
MiP Response of pCVD Diamond PA Sr90 ADC diamond delay Sr90 source Scint. discr PM1 & Gate discr PM2 Preamplifier Sensor box Trigger box typical spectrum of an E6 sensor C.Grah: Radhard Sensors for BeamCal
CCD Measurement ~ CCD CCD = Charge Collection Distance = mean drift distance of the charge carriers = charge collection efficiency x thickness Counts ADC Channels ~ charge C.Grah: Radhard Sensors for BeamCal
CCD Behavior • CCD is a function of the applied electric field. • Saturation at about 1V/µm. C.Grah: Radhard Sensors for BeamCal
Linearity Test at CERN PS 17 s 10 ns • Hadronic beam, 3 & 5 GeV Fast extraction mode ~104-107 particles / ~10 ns Setup Beam Scint.+ PMTs. Diamond gate signal ADC Response of diamond sensor to beam particles (no preamplifier/attenuated) Photomultiplier signals C.Grah: Radhard Sensors for BeamCal
Response vs. Particle Fluence Fraunhofer IAF Element Six E64 FAP2 30% deviation from a linear response for a particle fluence up to ~106 MIP/cm2 The deviation is at the level of the systematic error of the fluence calibration. C.Grah: Radhard Sensors for BeamCal
High Dose Irradiation Superconducting DArmstadt LINear ACcelerator Technical University of Darmstadt • Irradiation up to several MGy using the injector line of the S-DALINAC: 10 ± 0.015 MeV and beam currents from 10 to 100 nA corresponding to about 60 to 600 kGy/h Energy spectrum of shower particles in BeamCal V.Drugakov 6X0 C.Grah: Radhard Sensors for BeamCal
Preparations and Programme preamp box GEANT4 simulation of the geometry Beam setup absorber collimator Apply HV to the DUT Measure CCD ~20 min Irradiate the sample ~1 hour => R = NFC/NSensor = 0.98 <Edep>/particle = 5.63 MeV/cm CCD: Charge Collection Distance C.Grah: Radhard Sensors for BeamCal
Testbeam Setup Beam Collimator Sensor Faraday Cup C.Grah: Radhard Sensors for BeamCal
Results: CCD vs. Dose 100 nA (FAP5) Silicon starts to degrade at 30 kGy. High leakage currents. Not recoverable. After absorbing 7MGy: CVD diamonds still operational. 100 nA (E6_4p) C.Grah: Radhard Sensors for BeamCal
Behaviour after Irradiation No significant change of the current-voltage characteristics up to 1.5 MGy. Slight increase of currents for higher doses. C.Grah: Radhard Sensors for BeamCal
CCD Behaviour after Irradiation ~ -80% ~ -30% after 7 MGy after 1.5 MGy C.Grah: Radhard Sensors for BeamCal
After Irradiation: IAF Sample before/after ~ 7MGy ▪before irradiation ▪after irradiation strong „pumping“ behaviour. signal recovery after 20 Gy ▪FAP 5 irradiated, 1st measurement ▪FAP 5 irradiated, additional 20 Gy C.Grah: Radhard Sensors for BeamCal
Monocrystalline CVD Diamond Sensors -25 V sCVD diamond area: a few mm2, ~thickness 300 µm, metallization Ø3mm IV Characteristics (too low current for our setup) 100% efficient at low electric fields! C.Grah: Radhard Sensors for BeamCal
GaAs Sensor Material • Produced by the Siberian Instituteof Technology, Tomsk • semi-insulating GaAs doped by Sn (shallow donor) • compensated by Cr (deep acceptor):to compensate electron trapping centers EL2+ and provide i-type conductivity. C.Grah: Radhard Sensors for BeamCal
500 µm thick detector, divided into 87 5x5 mm pads Mounted on a 0.5 mm PCB with fanout Metallization is V (30 nm) + Au (1 µm) Works as a solid state ionization chamber and structure is provided by metallization (similar to diamond) GaAs Prototype Details C.Grah: Radhard Sensors for BeamCal
Properties of the GaAs Sensor Rpad 500 MOhm, pad capacity about 12 pF, dark current 1 μA @ 500 V CCD = 50% of sensor thickness C.Grah: Radhard Sensors for BeamCal
First View on Testbeam Results • Spatial CCD distribution corresponds to the beam profile • Pad with 2 CCD regions - due to collimation while irradiation → No trap diffusion • Dark current increased up to about 2 μA @ 500 V beam spot (~1 MGy) C.Grah: Radhard Sensors for BeamCal
Radiation Hard Silicon guard rings 400 V reverse voltage depletion zone • mCz Si, radiation hard, thickness 380 μm, 5x5 mm2 • n+ on n-configuration • works as solid state ionization chamber, but active volume = depletion zone signal by drifting excess charge carriers • guard rings to avoid surface currents C.Grah: Radhard Sensors for BeamCal
Radhard Silicon - Before Irradiation depletion voltage: 336 V → operational voltage 400 V C.Grah: Radhard Sensors for BeamCal
Silicon - Under Irradiation • Intended as a first step using the radhard silicon • CCD remained constant • Noise increased strongly • No cooling Signal/Noise vs DOSE CCD vs DOSE preliminary C.Grah: Radhard Sensors for BeamCal
Silicon Carbide • SiC is a potential sensor material with a high bandgap of > 3eV • First SiC material provided by the Technical University of Cottbus (BTU) • ~1cm2 size • very asymmetric behavior with high dark currents at low voltages => no signal detectable. • Need material with higher resistivity. C.Grah: Radhard Sensors for BeamCal
Summary • The FCAL Collaboration develops the detectors in the very forward region of the ILC detectors. • BeamCal is an important part of the instrumentation. • The requirements on the radiation hardness and linearity of the sensors are challenging. • CVD diamonds, radiation hard silicon, GaAs and SiC are interesting materials for this task and are under investigation. http://www-zeuthen.desy.de/ILC/fcal/ C.Grah: Radhard Sensors for BeamCal
luminosity detectors beam monitors Collaboration FCAL High precision design FCAL Collaboration Aim: design and construction of University of Colorado Brookhaven National Lab NY Yale University New Haven Laboratoire de l Accélérateur Linéaire Orsay Royal Holloway University London AGH University, Cracow Instituteof Nuclear Physics, Cracow DESY Joint Institute Nuclear ResearchDubna National Centerof Particle & HEP Minsk Prague Acad. of Science VINCA Inst. f. Nuclear Science Belgrade Tel Aviv University photon detectors http://www-zeuthen.desy.de/ILC/fcal/ EUROTeV, EUDET, NoRHDIA INTAS Cooperation with:SLAC Stanford University Iowa State University Wayne State University