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Radiation Effects on FLASH Based FPGA

Radiation Effects on FLASH Based FPGA. J.J. Wang 1 , B. Cronquist 1 , J. McCollum 1 , H. Tseng 1 , R. Lambertson 1 , S. Goethe 1 , R. Katz 2 , and I. Kleyner 3 1 Actel Corporation, Sunnyvale, CA94086 2 NASA Goddard Space Flight Center, Greenbelt, MD20771

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Radiation Effects on FLASH Based FPGA

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  1. Radiation Effects on FLASH Based FPGA J.J. Wang1, B. Cronquist1, J. McCollum1, H. Tseng1, R. Lambertson1, S. Goethe1, R. Katz2, and I. Kleyner3 1Actel Corporation, Sunnyvale, CA94086 2NASA Goddard Space Flight Center, Greenbelt, MD20771 3Orbital Sciences Corporation, Greenbelt, MD20771

  2. Outline • Device and Technology • Total Ionizing Dose Test and Results • Single Event Effects Test and Results • Summary

  3. Product Family

  4. Device Architecture

  5. FLASH-Memory Switch

  6. Logic Tile

  7. Total Ionizing Dose Test • Design: 200 inverters • Gamma radiation source (NASA/GSFC) • Dose rate 1 krad(Si)/hr • Biased at VCC=3.3V/2.5V • Static irradiation • Room Temperature • In-situ functionality, ICC monitoring • In-situ tPD measurement.

  8. Total Ionizing Dose Test Results

  9. VCC Ionizing Radiation Control Gate ONO Tunnel Oxide Floating Gate Source Drain Data Path Total Dose Effects on FLASH Switch • Ionizing radiation discharge the floating gate • Increase ON-state NMOS transistor resistance, increase RC delay in the data path • Increase OFF-state NMOS sub-threshold leakage, increase ICC

  10. T1 T2 T3 T = T1 · T2 · T3 Total Dose Effects on FLASH Switch Tunnel Oxide Radiation-Induced Traps • Radiation-Induced Leakage Current (RILC) in tunnel oxide • Similar to Stress-Induced Leakage Current (SILC) cause discharge of the floating gate • Charge retention cause long term reliability issue Floating Gate Silicon

  11. Single Event Effects Test • Design: 200 flip-flops shift register • Tandem Van de Graaff (BNL) • Flux = 105 particles/cm2 • Ion: 252 MeV Br • LET = 37.4 MeV-cm2/mg • Room Temperature • Biased at VCC=3.3V/2.5V • In-situ ICC monitoring

  12. SEE Test Board

  13. SEL Test Results Shutter Opened

  14. Summary • Total ionizing dose effects • Tolerance is limited by propagation delay • Speed degradation due to FLASH switch degradation? • Radiation induced leakage current cause retention issue? • In-flight reconfiguration is one solution to extend tolerance. • Single event effects • SEL occurred at LET=37.4 MeV-cm2/mg • Failure analysis to determine the latched up spot • Test new revision of device

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