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Experimental

Experimental. 1. Flexible TFT HfO 2 gate dielectric coating → Oven heating → Fixation method Coating on aluminum-coated glass As-dep . UVO-treated APTES-treated. Spin-coating Heating. fixed. fixed. PI. PI. Glass. Glass. Surface treatment was not effective

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Experimental

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  1. Experimental 1. Flexible TFT HfO2 gate dielectric coating → Oven heating → Fixation method Coating on aluminum-coated glass As-dep. UVO-treated APTES-treated Spin-coating Heating fixed fixed PI PI Glass Glass Surface treatment was not effective → NaOH cleaning

  2. Experimental 2. High-k & Graphene transistor Al2O3 - Significantly decreased leakage current

  3. Experimental 2. High-k & Graphene transistor Failed samples - Cannot find ID (Drain current) • Surface organic contamination • → Electrode-graphene contact • Defective graphene transfer

  4. Experimental 2. High-k & Graphene transistor • Low on/off ratio due to metallic graphene • Highest resistance peak at ~ 1V • (due to high capacitance of Al2O3) In reference → (~25% increase in resistance)

  5. Experimental Future works Hydrophilic surface treatment for metal-coated PI film (ex. NaOH cleaning) Graphene transfer and surface cleaning - H2 annealing 3. Electrode for graphene TFT - 3µm channel length - Ti/Au electrode

  6. Topological insulator Topological insulator A topological insulator is a material that behaves as an insulator in its interior but whose surface contains "protected" conducting states. required by: time-reversal symmetry → crystalline symmetry topology of the quantum description of the insulator Application – topological quantum computing

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