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Experimental

Experimental. Experiment Basic: AlCl3 + acetylacetone Increased annealing time to 60 min - Lowered leakage current for TFT device - Lowered capacitance by hydroxyl decomposition - Alloying to improve performances. Precusor for alloying

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Experimental

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  1. Experimental • Experiment • Basic: AlCl3 + acetylacetone • Increased annealing time to 60 min • - Lowered leakage current for TFT device • - Lowered capacitance by hydroxyl decomposition • - Alloying to improve performances Precusor for alloying ZrCl4 | ZrOCl2 | HfCl4 | HfOCl2 | TEOS → precipitates ZrO(NO3)2 | HfO(NO3)2 | YCl3→ did not precipitates

  2. Experimental Oxynitrate-based ZrO(NO3)2 + AlCl3 + acetylacetone Low proton conductivity (Less residual hydroxyls at given annealing temperature) AlCl3 - YCl3 precursor Couldn’t obtain coating Y-rich samples (High decomposition temperature of YCl3) Capacitance: Al(Al+Y) - 0.5 > 0.7 > 0.8 > others

  3. Experimental Leakage current ZrO(NO3)2 + AlCl3 + acetylacetone Al(Al+Y) – 0.8~1 showed appropriate leakage current Y-rich samples – did not insulate TFT device In2O3 – based TFT device 10-9 –level leakage current

  4. Experimental Acetylacetone - dependency Y - dependency Future works XPS – for hydroxyl (capacitance) and oxygen vacancy (leakage current) Ellipsometry – porosity (acetylacetone vs. n/a) Organic TFT device characterization – off current, hysteresis

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