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NUCLEAR ENERGY AND SAFETY SEMICONDUCTOR DETECTORS FOR NUCLEAR RADIATION SPECTROMETRY Description

NUCLEAR ENERGY AND SAFETY SEMICONDUCTOR DETECTORS FOR NUCLEAR RADIATION SPECTROMETRY Description

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NUCLEAR ENERGY AND SAFETY SEMICONDUCTOR DETECTORS FOR NUCLEAR RADIATION SPECTROMETRY Description

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  1. NUCLEAR ENERGY AND SAFETY SEMICONDUCTOR DETECTORS FOR NUCLEARRADIATION SPECTROMETRY Description Semiconductor detectors take one of the relevant places among devices of a nuclear spectrometry. Fundamental advantages of semiconductor detectors of nuclear particles: high energy resolution, linearity of characteristics in wide energy region for different particles; possibility provided with good geometry of experiments; not sensitivity to magnetic fields. Depending on nuclear - physical problems the detectors of various types will be utillized. The Department of Radiation Physics at Kyiv Institute for Nuclear Research has developed and producedthe detectors of following types:

  2. 1. Surface - barrier detectors of a total absorption (Е-detectors) on the basis of high-ohmic silicon n- and p- type of conductivity for a spectrometry of nuclear radiations.E-detector characteristics:Width of sensitive region 3003000 Reverse voltage 100  400 VEnergy resolution  1%2.Detectors of specific energy losses of charged particles (dE/dx-detectors) for operation in telescopes for definition of a spectrum of masses of charged particles participating in composite nuclear reactions.dE/dx-detector characteristics:Width of sensitive region 20  200 Reverse voltage 50  100 VEnergy resolution  1%3. Lithium-drifted silicon detectors (Si (Li)-detectors) on the basis of silicon compensated to lithium, for a spectrometry of charged particles.Si(Li)-detector characteristics:Width of sensitive region 500  5000 Reverse voltage 100  500 VEnergy resolution  1%

  3. Напівпровідникові детектори ядерних випромінювань

  4. Nеф в залежності від 1 МеВ нейтронного еквівалентного флюенсу для стандартних (темні позначки) і попередньо опромінених (відкриті позначки) приладів. Прямі лінії являються лінійною підгонкою експериментальних даних. Також представлені величини  — швидкість введення акцепторів. Неточність величин  одержана при підгонці експериментальнихданих до прямих ліній.

  5. Таблиця 2.1Порівняння значення  попередньо опромінених, стандартних і окислених діодів.

  6. CONCLUSIONS: • 1. Semiconductor detectors are among the most precise devices employed for spectral analysis of nuclear radiation due to their high energy resolution and possibility of divided on masses with high accuracy. • 2. Position-sensitive detectors have position resolution of some microns. • 3. Preirradiation of semiconductors and doping by isovalent impurities are the progressive methods for increasing of radiation hardness of silicon and other materials due to the creation the sinks for initial radiation defects. • 4. Application the neutron-transmutation doped silicon for developing of detectors leads to increasing of stability their characteristics and permits to produce the detectors with improved parameters.

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