1 . T itle : What will be the next generation memory?

1. SEMINAR 1. Title : What will be the next generation memory? 2. Speaker : Dr. Dongkyun Kim (Samsung Electronics) 3. Time : 16:00 – 17:30, Tuesday, September 12, 2006 4. Place : e+ Lecture Hall (room 83188), 2nd Research Building, Sungkyunkwan University 5. Summary : Not only Korea has become the powerhouse of memory business in the world, Korean companies have become technological leaders of current forms of memory, namely DRAM, SRAM, and NAND Flash. However, the key driver of the technological innovation, i.e. aggressive scaling a.k.a. Moore’s law, is getting close to the limit. Hence various new types of memory are posing as disruptive technologies, PRAM, MRAM, FRAM, RRAM, CBRAM, ZRAM, TRAM, CNT NROM, polymer memory, race track memory, etc. Nanotechnologies adopting bottom-up processes will enable numerous other forms of memory, too. Though these new types of memory are of paramount interest to big memory companies, it is usually up to academia, or small venture companies to come up with new ideas and processes outside of conventional memory. This talk will show current business and technology status of memory, and discuss future prospects of next next generation memory. 6 Background : Education 1991 Physics, Seoul National University, B.S 1993 Physics, Seoul National University, M.S 2002 Physics, Univesity of California, San Diego, Ph.D Work Experience 1993-1995 Korean Army 1995-2002 Research Assistant, Hellman Lab, University of California - Microcalorimeter device fabrication and heat capacity measurement of magnetic thin films and colossal magneto resistance manganites 2002-2005 Research Associate, Magnet Lab, Los Alamos National Laboratory - 3w thermal conductivity measurement in pulsed high magnetic field 2005- Senior Manager, CTO Strategy Office, Samsung Electronics - Technology Sensing and External Cooperation 7. Questions : Dr. Dongkyun Kim (☏ 031-277-7135) Sungkyunkwan University