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Submicron Scaling of III-V HBTs for 40-200 GHz Analog & Digital ICs

Submicron Scaling of III-V HBTs for 40-200 GHz Analog & Digital ICs. Mark Rodwell University of California, Santa Barbara . rodwell@ece.ucsb.edu 805-893-3244, 805-893-3262 fax. State-of-art in HBTs, 2000: cutoff frequencies. ~0.1 um emitters. ~1 um emitters (0.4 um). ~1 um emitters.

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Submicron Scaling of III-V HBTs for 40-200 GHz Analog & Digital ICs

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  1. Submicron Scaling of III-V HBTs for 40-200 GHz Analog & Digital ICs Mark Rodwell University of California, Santa Barbara rodwell@ece.ucsb.edu 805-893-3244, 805-893-3262 fax

  2. State-of-art in HBTs, 2000: cutoff frequencies ~0.1 um emitters ~1 um emitters(0.4 um) ~1 um emitters Si / SiGe have significantly poorer material parameters …but are much better scaled in size and current density

  3. State-of-Art in HBTs, 2000: small-scale circuits Si / SiGe has rough parity in logic with InP despite lower ft, fmaxdue to higher current density, better emitter contactsSi/SiGe has significantly slower amplifiers due to lower ft, fmax Si/SiGe has much better scales of integration, etc

  4. UCSB 160 Gb/s is more than possible ! AgilentConexant Zach Griffith 160 Gb/s LIA simulations using UCSB HBT model

  5. Scaling Laws for fast HBTs for x 2 improvement of all parasitics: ft, fmax, logic speed…base Ö2: 1 thinnercollector 2:1 thinneremitter, collector junctions 4:1 narrowercurrent density 4:1 higheremitter Ohmic 4:1 less resistive transferred-substrate undercut-collector Challenges with Scaling:Collector mesa HBT: collector under base Ohmics. Base Ohmics must be one transfer lengthsets minimum size for collector Emitter Ohmic: hard to improve…how ?Current Density: dissipation, reliabilityLoss of breakdownavalanche Vbr never less than collector Egap (1.12 V for Si, 1.4 V for InP) ….sufficient for logic, insufficient for power Narrow-mesa with 1E20 carbon-doped base

  6. Submicron Transferred-Substrate HBT UCSB Michelle Lee 3000 Å collector 400 Å base with 52 meV grading AlInAs / GaInAs / GaInAs HBT (?)

  7. UCSB Record f HBT Yoram Betser 2000 Å collector 300 Å base with 52 meV grading AlInAs / GaInAs / GaInAs HBT Emitter 1 x 8 m2, Collector 2 x 8.5m2.

  8. 105 A/cm2 UCSB High Speed, High Breakdown DHBTs pk Sundararajan M Dahlstrom 1x 8 micron emitter, 2x 10 micron collector BVCEO>9 V ft= 165 GHz; fmax = 303 GHz 5 V breakdown at 105 A/cm2

  9. UCSB High Speed Amplifiers Dino MensaPK Sundararajan 18 dB, DC-50 GHz S21 397 GHz gain x bandwidth from 2 HBTs S11 S22 8.2 dB, DC-80 GHz

  10. HBT distributed amplifier UCSB AFOSR 11 dB, DC-87 GHz PK Sundararajan TWA with internal ft-doubler cells

  11. UCSB ARO Caltech InP-HBT W-band Amplifiers James Guthrie Common-Base Amplifier: 9.7dBm at 82.5 GHz Balanced Amplifier: 10.7dBm at 78GHz (transferred-substrate HBT)InGaAs-collector:® Vbr=1.5 V ®low powerInP-collector:® Vbr~5 V ®higher powers expected

  12. UCSB 66 GHz HBT master-slave flip-flop Michelle Lee Objectives: 100 + GHz logic Approach: transferred-substrate HBTs, microwave / digital design Simulations: 95 GHz clock rate in SPICE Accomplishments:operation to 66 GHz 33.0 GHz static divider output at 66.0 GHz input

  13. UCSB 3500-HBT 20 GHz Sine ROM WOM Yoram Betser receivers & drivers ROM core decoder core output latches input latches selectors receivers (it is hard to build large ICs in a university cleanroom)

  14. Matlab Simulation <-signal ADC noise = 150 dB in 1 Hz ADC Block Diagram UCSB Shrinivasan Jaganathan Delta-Sigma ADC 18 GHz clock rate 150 HBTs 6.2 ENOB for a 1 GHz signal ( 2 GS/s equivalent Nyquist)

  15. UCSB 185 GHz HBT Amplifier AFOSR Miguel Urteaga

  16. UCSB 19 GHz 2-bit adder Thomas Mathew

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