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Resist Materials Characterization Work in ExCITe W.-D. Domke; Infineon. ExCITe/More Moore Meeting May 12, 2005 Athens, Greece. Status & Plans of Infineon Materials Characterization. Bulk EUV litho characterization of relevant resist platforms done
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Resist Materials Characterization Work in ExCITe W.-D. Domke; Infineon ExCITe/More Moore Meeting May 12, 2005 Athens, Greece
Status & Plans of Infineon Materials Characterization • Bulk EUV litho characterization of relevant resist platforms done • model resist formulation (outgassing, scissioning, ..) on hold • characterization of polymer side reactions finished and reported • correlation of chain scissioning and outgassing in EUV • Open frame tool TEUVL available; further plans to be determined
WP 1: EUV Resist Technology Open Frame Exposures • Bulk Litho Characterization of main Resist Classes done (M1.1.5 & M1.1.7): Most investigated chemical platforms are viable for EUV patterning, no clear advantage could be found for either 193nm or 248nm type resists/polymers.Pilot EUV samples (Clariant EXC20 & EXC21; M1.1.6) are availableResolution down to 40nm shown with EUV Interference Lithography
CO / C2H4 CO2 500000 C3H7 400000 acrylic resist (ACR-MA) ESCAP C4H8 C4H3 C6H6 molecular weight C2H5O POSS CH3J 10000 J ESCAP acrylic CF3 COMA-Si resist 1000 0 10 20 30 40 50 60 EUV dose WP 1: EUV Resist Technology Polymer side reactions Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassing than 193nm resists. Polymers with high tendency to chain scissioning show the most outgassing
WP 1: EUV Resist Technology Polymer side reactions acrylic model resists show more chain scissioning in EUV compared to even 157nm. ESCAP resist shows dose-dependent scissioning / crosslinking behavior 3rd Int. EUV Symp, Miyazaki & SPIE 2005, San Jose Quantitation of total outgassing [molecules/cm2 sec]