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ACCOMPLISHMENTS Demonstrated the first vertical power MOSFET in SiC

High Temperature, Silicon Carbide, Power MOSFET. S mall B usiness I nnovation R esearch. Cree Research, Inc. Durham, NC. INNOVATION. A process for producing high performance power metal/oxide semiconductor field-effect transistors (MOSFETs) in Silicon Carbide (SiC). ACCOMPLISHMENTS

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ACCOMPLISHMENTS Demonstrated the first vertical power MOSFET in SiC

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  1. High Temperature, Silicon Carbide, Power MOSFET Small Business Innovation Research Cree Research, Inc. Durham, NC INNOVATION A process for producing high performance power metal/oxide semiconductor field-effect transistors (MOSFETs) in Silicon Carbide (SiC) • ACCOMPLISHMENTS • Demonstrated the first vertical power MOSFET in SiC • Fabricated a high-performance MOSFETs in SiC that can operate up to 300°C • Received Patent on this technology • COMMERCIALIZATION • Increased SiC material and device sales by >$3M • Created 12 new jobs and saved existing jobs • Initiated tremendous worldwide interest in the area of SiC power semiconductors, resulting in multi-$M programs in SiC MOSFETs for government and commercial labs • Total market potential for SiC Power MOSFETs would be >$2B Cross-Section of a SiC Power MOSFET • GOVERNMENT/SCIENCE APPLICATIONS • Will be used in aircraft engines • Applicable for high temperature electronics in space craft and will reduce weight and size of spacecraft • Can be used to replace Silicon power devices in power circuits for electric motors and power control, for electric vehicles, robotics, and power supplies • SiC MOSFETs offer much higher efficiencies than silicon in these applications. Potential power savings of >$1B/yr are possible Lewis Research Center Instrumentation and Controls 3-021 1988 Phase II, NAS3-25956 , 9/98 NASA Contact - Lawrence Matus Company Contact - John Palmour

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