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MOSFET. Dr. S. S. Jawale Head and Associate Professor Department of Electronics Yeshwantrao Chavan Mahavidyalaya, Tuljapur. B.Sc.-I Sem-I Paper-I. 1. MOS-Controlled Thyristor. New device that has become commercially available.
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MOSFET Dr. S. S. Jawale Head and Associate Professor Department of Electronics Yeshwantrao Chavan Mahavidyalaya, Tuljapur B.Sc.-I Sem-I Paper-I 1
MOS-Controlled Thyristor • New device that has become commercially available. • Basically a thyristor with two MOSFETs built in the gate structure. • One MOSFET for turning ON the MCT and the other to turn OFF the MCT. 2
Features • Low on-state losses & large current capabilities. • Low switching losses. • High switching speeds achieved due to fast turn-on & turn-off. • Low reverse blocking capability. 5
Gate controlled possible if current is less than peak controllable current. • Gate pulse width not critical for smaller device currents. • Gate pulse width critical for turn-off for larger currents. 6
MOSFET 7 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Semiconductor Cross-section of IGBT 8 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
IGBT 9 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Advantages of IGBT • Combines the advantages of BJT & MOSFET • High input impedance like MOSFET • Voltage controlled device like MOSFET • Simple gate drive, Lower switching loss • Low on state conduction power loss like BJT • Higher current capability & higher switching speed than a BJT. ( Switching speed lower than MOSFET) 10 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Applications of IGBT • ac and dc motor controls. • General purpose inverters. • Uninterrupted Power Supply (UPS). • Welding Equipments. • Numerical control, Cutting tools. • Robotics & Induction heating. 11 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Devices • SITH = Static Induction Thyristor • GTO = Gate Turn Off Thyristor • MOS = Metal Oxide Semiconductor • MCT = MOS Controlled Thyristor • MTO = MOS Turn Off Thyristor • ETO = Emitter Turn Off Thyristor • IGCT = Insulated Gate Controlled Thyristor • TRIAC = Triode Thyristor • LASCR = Light Activated SCR
Devices.. • NPN BJT = NPN Bipolar Junction Transistor • IGBT = Insulated Gate Bipolar Junction Transistor • N-Channel MOSFET = N-Channel Metal Oxide Silicon Field Effect Transistor • SIT = Static Induction Transistor • RCT = Reverse Conducting Thyristor • GATT = Gate Assisted Turn Off Thyristor
Power Semiconductor Devices, their Symbols & Characteristics 14
DEVICE SYMBOLS & CHARACTERISTICS 15 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Comparison between different commonly used Thyristors • Line Commutated Thyristors available up to 6000V, 4500A. • Ex: Converter grade (line commutated) SCR. • V / I rating: 5KV / 5000A • Max. Frequency: 60Hz. • Switching time: 100 to 400sec. • On state resistance: 0.45m. 18
Example of Inverter Grade Thyristor Ratings • V / I rating: 4500V / 3000A. • Max. Frequency: 20KHz. • Switching time: 20 to 100sec. • On state resistance: 0.5m. 19
Example of Triac Ratings • Used in heat / light control, ac motor control circuit • V / I rating: 1200V / 300A. • Max. Frequency: 400Hz. • Switching time: 200 to 400sec. • On state resistance: 3.6m. 20
Example of Power Transistor Ratings • PT ratings go up to 1200V / 400A. • PT normally operated as a switch in CE config. • Max. Frequency: 400Hz. • Switching time: 200 to 400sec. • On state resistance: 3.6m. 21
Example of Power MOSFET Ratings • Used in high speed power converters like inverters & choppers. • Ratings up to 1000V / 100A. • Example: MOSFET 800V / 7.5A rating. • Max. Frequency: 100KHz. • Switching time: 1.6sec. • On state resistance: 1.2m. 22
Example of IGBT Ratings • Used in high voltage / current & high frequency switching power applications (Inverters, SMPS). • Example: IGBT 2500V / 2400A. • Max. Frequency: 20KHz. • Switching time: 5 to sec. • On state resistance: 2.3m. 23