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MOSFET. Flat-Band Voltage. The flat-band voltage is defined as the applied gate voltage such that there is no band bending in the semiconductor and, as a result, zero net space charge in this region. What does the charge density plot look like for the above band diagram?.
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Flat-Band Voltage The flat-band voltage is defined as the applied gate voltage such that there is no band bending in the semiconductor and, as a result, zero net space charge in this region. What does the charge density plot look like for the above band diagram?
MOSFET– I-V Where is pinch-off?
MOSFET– I-V VDsat = VG – VT when VD < VDsat, linear or triode operation when VD >VDsat, saturation region of operation
MOSFET– I-V Do these equations make sense?
MOSFET– I-V Accommodate the charge in the depletion region Induce the inverted region
Effective Mobility Channel depth Charge/cm2 in the channel at an arbitrary point
Surface Scattering Mobility is not constant in the channel
Square-Law Theory Oxide capacitance per unit area of the gate
Square-Law Theory Linear or Triode mode
Square-Law Theory vs. Bulk-Charge Theory Square-law assumes that the depletion width at all channel points from the source to the drain remains fixed at WT as VD changes. But we know this isn’t true!
Square-Law Theory vs. Bulk-Charge Theory The variation in the depletion layer or “bulk” charge must be included in any charge balance relationship. Changes in the depletion width
A.C. Response • In many applications, the MOSFET is used in a linear amplifier circuit. • A small-signal equivalent circuit for the MOSFET is needed to mathematically analyze the electronic circuit. • The equivalent circuit contains capacitances and resistances that introduce frequency effect. • Small-circuit equivalent circuit • Physical factors that limit frequency response
A.C. Response The transconductance is sometimes referred to as the transistor gain.
A.C. Response Transconductance is a function of geometry of the device as well as of carrier mobility and threshold voltage. It increases as oxide thickness decreases.
A.C. Response – Cutoff Frequency fmax -> frequency where the MOSFET is no longer amplifying the input signal. Channel length is the key parameter in determining fmax.