30 likes | 161 Views
TABLE I. Summary of the structural parameters of the shallow QWs in three samples extracted from the XRD (004) ω /2 θ scan measurements and the corresponding performances of LED devices. Results and Discussion. @ ( 1 mA ). Under 20 mA (40 A/cm 2 ). 14%. 57%.
E N D
TABLE I. Summary of the structural parameters of the shallow QWs in three samples extracted from the XRD (004) ω/2θ scan measurements and the corresponding performances of LED devices.
Results and Discussion @ ( 1 mA ) Under 20 mA (40 A/cm2) 14% 57% • lighting efficiency (light output/electric power input) FIG. 2. (a) Current-voltage characteristics of Sample A, B, and C. (b) Inte- grated EL intensity of Sample A, B, and C as a function of injection current.
InGaN QWs with In% = 16% FIG. 3. Reciprocal space mapping around GaN asymmetric (10.5) diffrac- tion of (a) Sample A and (b) Sample C.