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Results and Discussion. 354nm ; 0.131A/W. 357nm ; 0.129A/W. 356nm ; 0,13 A/W. Spectral responsivities of nitride-based p-i-n bandpass photodetectors at room temperature. η ： quantum efficiency （量子效率） R ： measured responsivity （響應） q ： electron charge （基本電荷 1.62 × 10 -19 ）
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Results and Discussion 354nm ; 0.131A/W 357nm ; 0.129A/W 356nm ; 0,13 A/W Spectral responsivities of nitride-based p-i-n bandpass photodetectors at room temperature.
η：quantum efficiency（量子效率） R：measured responsivity（響應） q ：electron charge（基本電荷1.62×10-19） λ：incident light wavelength（入射光波長） h ：Planck constant（普郎克常數6.62 ×10-32） c ：speed of light（光速率2.99 ×1010）
by： Sample A 0.131= η × （ 1.6 × 10-19× 354 × 10-9）／（6.626 × 10-34× 2.99 ×108） η = 0.46 × 100％≒46 ％ Sample B 0.129= η × （ 1.6 × 10-19× 357 × 10-9）／（6.626 × 10-34× 2.99 ×108） η = 0.45 × 100％≒45 ％ Sample C 0.13= η × （ 1.6 × 10-19× 356× 10-9）／（6.626 × 10-34× 2.99 ×108） η = 0.45 × 100％≒45 ％
Current–voltage characteristics of the nitride-based p-i-n bandpass photodetectors at room temperature with fitting curve. R = (dV=dI) at zero bias.
Conclusion Nitride-based p-i-n bandpass photodetectors with 60-, 150,and 300-nm-thick blocking p-AlGaN layers were successfully fabricated and characterized. The peak responsivities wereestimated to be 0.131, 0.129, and 0.13 A/W at 354, 357,and 356 nm for 60-, 150-, and 300-nm-thick p-Al Ga N blocking layer, respectively, corresponding to a quantum efficiency of around 46%.
