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Accurate Physical Model for the Lateral IGBT in Silicon On Insulator Technology Ettore Napoli 1,2 , Vasantha Pathirana 1

Accurate Physical Model for the Lateral IGBT in Silicon On Insulator Technology Ettore Napoli 1,2 , Vasantha Pathirana 1 , Florin Udrea 1,3 1 Dept. of Engineering, University of Cambridge, UK 2 Dept. Electronic and Telecom. Univ. of Napoli, Italy 3 Cambridge Semiconductor (CamSemi), UK.

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Accurate Physical Model for the Lateral IGBT in Silicon On Insulator Technology Ettore Napoli 1,2 , Vasantha Pathirana 1

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  1. Accurate Physical Model for the Lateral IGBT in Silicon On Insulator Technology Ettore Napoli1,2, Vasantha Pathirana1, Florin Udrea1,3 1 Dept. of Engineering, University of Cambridge, UK 2 Dept. Electronic and Telecom. Univ. of Napoli, Italy 3 Cambridge Semiconductor (CamSemi), UK EU research program ROBUSPIC ISIE, Dubrovnik, June 21st 2005

  2. Outline • Motivation • Thin SOI LIGBT • Differences with Vertical IGBT • Spice sub-circuit model for LIGBT • Model equations • Model behavior • Numerical results • Conclusion ISIE, Dubrovnik, June 21st 2005

  3. Motivation • Available IGBT circuit models are not suited to Lateral IGBT • Need for • a reliable physical based model for Lateral IGBT • usable in various circuit simulators • Extension to different LIGBT technologies • Important for smart power design ISIE, Dubrovnik, June 21st 2005

  4. Thin SOI Lateral IGBT • 600V PT • Transparent buffer • Source and Drain up to the BOX • Current flow is horizontal and 1D ISIE, Dubrovnik, June 21st 2005

  5. Differences with Vertical IGBT (1) • Not zero carrier concentration at the collector edge for LIGBT ISIE, Dubrovnik, June 21st 2005

  6. Differences with Vertical IGBT (2) • Electrons injected from the n+ accumulation layer into the n- drift across the n+/n- junction. • The structure features double injection (similar to a PIN or a thyristor) ISIE, Dubrovnik, June 21st 2005

  7. Differences with Vertical IGBT (3) • Total charge and charge profile LIGBT Vertical IGBT ISIE, Dubrovnik, June 21st 2005

  8. Differences with Vertical IGBT (4) • Depletion width vs. reverse voltage is influenced by 2D effects ISIE, Dubrovnik, June 21st 2005

  9. Differences with Vertical IGBT (5) • Depletion width LIGBT vs. Vertical IGBT • 0V ISIE, Dubrovnik, June 21st 2005

  10. Differences with Vertical IGBT (5) • Depletion width LIGBT vs. Vertical IGBT • 5V ISIE, Dubrovnik, June 21st 2005

  11. Differences with Vertical IGBT (5) • Depletion width LIGBT vs. Vertical IGBT • 10V ISIE, Dubrovnik, June 21st 2005

  12. Differences with Vertical IGBT (5) • Depletion width LIGBT vs. Vertical IGBT • 100V ISIE, Dubrovnik, June 21st 2005

  13. Differences with Vertical IGBT (5) • Depletion width LIGBT vs. Vertical IGBT • 200V ISIE, Dubrovnik, June 21st 2005

  14. Differences with Vertical IGBT (5) • Depletion width LIGBT vs. Vertical IGBT • 300V ISIE, Dubrovnik, June 21st 2005

  15. Differences with Vertical IGBT (6) • Depletion region mobile charge effect ISIE, Dubrovnik, June 21st 2005

  16. IGBT models not suited for LIGBT • Voltage rise at turn-off is faster due to lower charge in the epilayer and slower depletion width expansion ISIE, Dubrovnik, June 21st 2005

  17. Spice sub-circuit model for LIGBT Currents and voltages Epilayer charge equation ISIE, Dubrovnik, June 21st 2005

  18. Spice sub-circuit model for LIGBT • Vj : Emitter junction • Vdrift: Depends on the injected carriers • analytic solution • Vmos: Mosfet (level 1) ISIE, Dubrovnik, June 21st 2005

  19. Spice sub-circuit model for LIGBT • IN(W) : Electron current through the level 1 Mosfet ISIE, Dubrovnik, June 21st 2005

  20. Spice sub-circuit model for LIGBT • IP(W) : Bipolar hole current ISIE, Dubrovnik, June 21st 2005

  21. Spice sub-circuit model for LIGBT • IN(0) : Electron current through the emitter junction ISIE, Dubrovnik, June 21st 2005

  22. Spice sub-circuit model for LIGBT P0 Time is increasing PW Wt Wt+δt Wt+2δt 0 Increasing Anode Voltage Stable Anode Voltage • IPC_TRN : Transient current due to charge sweep-out ISIE, Dubrovnik, June 21st 2005

  23. Base charge equation • IN(W) is the MOSFET current • IN(0) is the emitter edge electron current • IPC_TRN is the charge sweep out current • The last term is for the recombination in the base ISIE, Dubrovnik, June 21st 2005

  24. Other model features • Carrier concentration dependent mobility model • Gate-Source Drain-Source and Gate-Drain capacitances are implemented • Physical based model with 17 parameters ISIE, Dubrovnik, June 21st 2005

  25. Spice circuit parameters ISIE, Dubrovnik, June 21st 2005

  26. Static characteristics ISIE, Dubrovnik, June 21st 2005

  27. Model behavior Expanded for I=1A, V=200V InductiveTurn-off ISIE, Dubrovnik, June 21st 2005

  28. Transient behavior V=200V, I=2A. V=400V, I=2A. ISIE, Dubrovnik, June 21st 2005

  29. Transient behavior Resistive switch, 200W resistor load ISIE, Dubrovnik, June 21st 2005

  30. Model behavior Toff Energy vs. Von as a function of lifetime ISIE, Dubrovnik, June 21st 2005

  31. Conclusion • A physical based circuit model for Lateral IGBT • Implemented in Spice • Defined through 17 physical parameters • Compared against device numerical simulation • Extendable to Thick SOI and JI-LIGBT ISIE, Dubrovnik, June 21st 2005

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