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Long Wave Infrared Hot Electron Transistor (IHET)

Long Wave Infrared Hot Electron Transistor (IHET). Mitra Dutta , ECE Primary Grant Support: Intelligent Expitaxy Technology and MDA. Robust low cost Infrared photodetectors as well as those with room or near room temperature operation

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Long Wave Infrared Hot Electron Transistor (IHET)

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  1. Long Wave Infrared Hot Electron Transistor (IHET) MitraDutta, ECE Primary Grant Support: Intelligent Expitaxy Technology and MDA • Robust low cost Infrared photodetectors as well as those with room or near room temperature operation • Quantum well infrared photodetectors (QWIPs) due to the well developed mature GaAs technology • High-pass filter for the photocurrent which blocks the tunneling dark current Quantum Well Infrared Photodectetor (QWIP) with a energy filter between base and collector • InxGa1-xAs/AlyGa1-yAs multi quantum wells, three terminal structure grown by molecular beam epitaxy • Modeling of electrical properties based on its composition and doping • Investigation of structural, optical and transport properties by means of transmission electron microscopy, x-ray diffraction, Photoluminescence, Raman spectroscopy, current-voltage measurement • The atomic resolution images and x-ray diffraction patterns verified a lattice matched and band-gap engineered device structure of IHET. • Photoluminescence data indicated the composition and a deep energy level in hot electron filter • Current-voltage data showed high-pass filter blocks the tunneling dark current, with resulting satisfactory detectivity • Optimization of the composition, thickness, and doping of high-pass filter

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