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MOSIS OVERVIEW MSE99 July 19, 1999

MOSIS OVERVIEW MSE99 July 19, 1999. César A. Piña http://www.mosis.org. THREE PHASES: http://www.mosis.org. Phase I: 1981-1985 DARPA Direct Funded Era: 100% DARPA Funded Phase II: 1985-1994 Multi-Agency Direct Funding DARPA: ~80% Subsidized All Undesrsubscribed Runs NSA, NSF: ~15%

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MOSIS OVERVIEW MSE99 July 19, 1999

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  1. MOSIS OVERVIEWMSE99July 19, 1999 César A. Piña http://www.mosis.org

  2. THREE PHASES:http://www.mosis.org • Phase I: 1981-1985 • DARPA Direct Funded Era: 100% DARPA Funded • Phase II: 1985-1994 • Multi-Agency Direct Funding • DARPA: ~80% • Subsidized All Undesrsubscribed Runs • NSA, NSF: ~15% • Purchased Needed Projects Only • Commercial Customers: ~5% • Helped to defray Government Costs by using excess area. • Phase III: 1994-1999 • Self-Sustaining Operations • Commercial Customers are Primary Source of Income: ~90% • DARPA: ~5%; NSA/NSF: ~5%

  3. Supertex SCNA20: 2.00µ 2-metal, 2-poly, NPN, n-well 5V Analog/Digital Integrated CMOS MEMs Orbit Fab purchased by Supertex AMI ABN: 1.20µ 2-metal, 2-poly, NPN, n-well 5V Analog/Digital Integrated CMOS MEMs HP AMOS14TB: 0.50µ 3-metal, 1-poly, linear cap, silicide block, n-well 3.3V AMI C5N: 0.50µ 3 metal, 2 poly, non-silicided, n-well 5V Analog/Digital HP GMOS10QA: 0.35µ 4-metal, 1-poly, silicided, n-well 3.3V TSMC : 0.35µ polycided, n-well 3-metal, 2-poly, 3.3/5V 4 metal, 1-poly 3.3V Analog/Digital TSMC : 0.25µ 5-metal, 1-poly, silicided, n-well 3.3/5v I/O, 2.5/3.3v Core TECHNOLOGIEShttp://www.mosis.org

  4. 20x20mm Die From a 0.35µ Multiproject Run

  5. HP/CSP/CSM C07: 0.25µ 5-metal, 1 poly, silicided, n-well, 1.8/3.3v I/O, 1.8v Core, 4Q99 5v I/O, 1.8v Core, 1Q00 TSMC 0.18µ: 0.18µ 6-metal 2.5/3.3v I/O, 1.5/1./8v Core 2Q00 Peregrine SOI-SOS: 0.50µ 3 metal layers, various options 3Q99 QUAL RUN IN PROGRESS TSMC 0.15µ: 0.15µ 2.5/3.3v I/O, 1.2-1.5v Core 4Q01 HP/CSP/CSM C/G04: 0.15µ 6-metal, 1 poly, silicided, Cu 1.5/3.3v I/O, 1.5v Core 4Q01 TSMC 0.13µ: 0.13µ 6-metal, 1 poly, silicided, Cu 1.8/2.5v I/O, 1.0/1.2v Core 2Q02 HP/CSP/CSM C/G04: 0.13µ 6-metal, 1 poly, silicided, Cu 1.8/3.3v I/O, 1.2-1.3v Core 4Q02 Future TECHNOLOGIEShttp://www.mosis.org

  6. 21st Century MOSIS • CMOS will continue to be the dominant technology for the foreseeable future • Only known circuit configuration that draws 0 power when not switching • CMOS feature sizes will continue to decrease • 0.25 and 0.18  will probably be the “workhorse” logic technologies for the next 5 years - because of COST • 0.35  - 1998 - I line lithography (365nm) OK • 0.25  - 1999 -248nm excimer lasers-fused silica ok • “Leading Edge” • 0.18  - 2001- 193nm laser-close to short  limit for refractive optics • 0.15  - 2003 - Scaling of 0.18m • 0.13  - 2005 - Lots of engineering problems but doable

  7. PHOTOLITHOGRAPHY: CONTROLS THE COST • Full wafer lithography (FWL) is lowest cost • Large payload: >5000sqmm • 2um is lowest practical limit • 1X Stepper Lithography is next • Medium payload: ~ 900 sqmm • 1.2um is lowest practical limit • 5X Stepper Lithography is next • Small Payload: 290 - 400 sqmm max. • Technology of choice for 1.2um and below • 1um defect on mask is 0.2um on wafer • 0.5 um - 1.6um mask tech. straightforward • Below 0.5um masks become VERY expensive • BUT - (Fortunately) THE RETICLE SIZE IS INCREASING AS THE FEATURE SIZE DECREASES!

  8. MOSIS EDUCATIONAL PROGRAM • What is the MOSIS Educational Program? • The MOSIS Educational Program provides free fabrication of integrated circuits designed by students in organized classes at accredited U.S. educational institutions. • Who is eligible for funding? • Funding is available to accredited U.S. universities who agree to the following terms: • Designs must be sent to MOSIS in CIF or GDSII format via the Internet. • A report must be sent to MOSIS for each fabricated circuit. • Further Details can be found at: • http://www.mosis.org

  9. MOSIS EDUCATIONAL PROGRAMFunding Sources • AMI has donated 4 wafer runs/yr (1.2/1.5 ) • HP has donated 2 wafer runs/yr (0.5 ) • IBM has donated 2-3 wafer runs (0.35 ) • MOSIS contributes: • All administrative costs • The Educational share of the 2wafer costs • 0.35  fabrication for a selected number of projects from advanced classes in the regularly scheduled runs. (The 0.25 runs will also become available in the near future) • NSF funding decreasing, BUT some funding remains and will help transition the program to a self-sustaining mode. • Various industrial firms and professional societies have made cash contributions

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