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C Da Via’, J Hasi, A Kok , S Watts (Brunel University)

3D Silicon & Radiation Hardness. Outline: Why is 3D Silicon Rad Hard (at high fluences)?? Discussion Results Conclusions and future plans. C Da Via’, J Hasi, A Kok , S Watts (Brunel University) G Anelli, M Deile, P Jarron, J Kaplon, J Lorzano (CERN) S Parker (Hawaii)

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C Da Via’, J Hasi, A Kok , S Watts (Brunel University)

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  1. 3D Silicon & Radiation Hardness • Outline: • Why is 3D Silicon Rad Hard (at high fluences)?? • Discussion • Results • Conclusions and future plans C Da Via’, J Hasi, A Kok, S Watts (Brunel University) G Anelli, M Deile, P Jarron, J Kaplon, J Lorzano (CERN) S Parker (Hawaii) C Kenney E. Westbrook (MBC) J Morse (ESRF)

  2. OBVIOUS ANSWER is ‘yes because 3D has’: • Short collection distance (50 mm) • High average e-field with moderate Vbias • Parallel charge collection • Always use full substrate thickness (MIP ~80 e-/mm) • Drawback: higher Capacitance (measured 200 fF/121mm/electrode) Could thin [O] rich planar Silicon devices be competitive? IWORID 2004 C. Da Via Brunel University

  3. 3D VERSUS PLANAR microcracks, chips induce surface leakage current particle Active edge PLANAR 3D ~ 500mm p+ p+ n+ n+ 50 mm i - - 300 mm - - - - - - - - + + + + + + + + + + n+ Collecting electrode Collecting electrode p n MEDICI simulation of a 3D structure n n Drift lines parallel to the surface IWORID 2004 C. Da Via Brunel University From H Spieler/LBL, data from Radeka/ BNL

  4. total n p other charged hadrons RADIATION DAMAGE IN HIGH ENERGY PHYSICS EXPERIMENTS: Multiple particle environment >85% charged Hadrons for pixels 1MeV neutron eq ATLAS Feq R=4cm 1.6x1016 NIEL compilation due to G. Lindstrom, NIEL IS VIOLATED between n and p when high [O] in Si ~5x1015 ~5x1014 IWORID 2004 C. Da Via Brunel University

  5. RADIATION INDUCED BULK DAMAGE in Si Primary Knock on Atom Displacement threshold in Si: Frenkel pair E~25eV Defect cluster E~5keV Vacancy Interstitial Van Lint 1980 IWORID 2004 C. Da Via Brunel University

  6. Studies mainly from RD48/ROSE Collaboration AT 1x1015 n/cm2 : STANDARD 300mm n-type SILICON at 1015 n/cm2 10 years of operation at L=1034 cm-2s-1 at R=4 cm EFFECTIVE DRIFT LENGTH Due to charge trapping~150mm e- ~50mm h SPACE CHARGE-ve Neff (1013/cm3) ~ VFD (5000V)~F TYPE INVERSIONdepletion from n-contact (e-field) REVERSE ANNEALINGINCREASE OF -ve Neff temp. dep LEACKAGE CURRENT prop to F (I/V ~5x10-17F) • Signal formation • Charge sharing • Speed • Double junction • Charge diffusion • Noise • Thermal runaway Time [y] • Maintenance IWORID 2004 C. Da Via Brunel University

  7. V+O = VO EFFICIENT TRAPS! V2+0 = V2O CONTRIBUTES TO NEFF NEUTRON PROTON PUZZLE PROTONS  POINT DEFECTS Signal can degrade because of: reduced depleted volume trapping IWORID 2004 C. Da Via Brunel University

  8. EXAMPLE OF NIEL VIOLATION Effective trapping time tt for e and h measured by Kramberger differs between neutronand proton irradiation Leff = tt x vdrift • Collect electrons • Beware protons! • Work at vdrift saturated Trapping times from Kramberger et al. NIMA 481 (2002) 100 Simulations CDV and S.Watts NIM A 501(2003) 138 (Vertex 2001) IWORID 2004 C. Da Via Brunel University

  9. 25ns electronics 3x1014 n/cm2 T=-170C Casse’ et al. NIMA 487 (2002) 465-470 CONSIDERATION ON CCE and SIGNAL 2 REGIMES: 1- LOW FLUENCE- DEPLETION VOLUME DOMINATES Neutrons= bad Protons =good Oxygen helps 2- HIGH FLUENCE –TRAPPING DOMINATES Neutrons = bad Protons = worse! Oxygen does not help 500 n-in-p 400 300 Oxy p-in-n 200 Standard p-in-n 100 0 0 100 200 300 400 500 600 IWORID 2004 C. Da Via Brunel University

  10. THE SIGNAL IS DIRECTLY PROPORTIONAL TO Leff Positive! The signal flattens at high f Should then planar detectors be thinner? data strip pad IWORID 2004 C. Da Via Brunel University

  11. 50 mm e- ONLY IF PITCH PROP. SMALLER 1 pad 50 mm If same pitch Thin detector = PAD! Scale!! 0.07 Better to work under-depleted With a thicker detector to make use of the steepness of the weighting potential (which only depends on the electrode width/thickness ratio) Distance (cm) IWORID 2004 C. Da Via Brunel University

  12. n+ p+ MIP 121 mm depletion 3D - RADIATION HARD TESTS Room Temperature NON oxygenated • VFD • CCE AFTER 1x1015p/cm2 (5x1014n/cm2) 105 V AFTER 2x1015 n/cm2 • IEEE Trans on Nucl Sci 48 (2001) 1629 • Nucl.Instrum.Meth.A509:86-91,2003 joined work Brunel, Cern, Hawaii to be published

  13. 1 0 -1 MIP -2 -3 -4 -5 -6 -7 -20 -10 0 10 20 ns SPEED (SLHC bx =12.5ns) MIP 3.5 ns at 300K before and after f 1.5 ns at 130K MIP MIP MIP After 1x1015p/cm2 (5x1014n/cm2) counts time [ns] *Fast Electronics CERN MIC : P. Jarron et al. NIM A 377 (1996) 435 IWORID 2004 C. Da Via Brunel University

  14. 3D wins compared with equal electrode spaced Si if pitch is not smaller despite larger 3D capacitance (thin substrate  higher C in planar devices as well) • S/N better for 3D because one can use all the charge deposited in the substrate In Conclusion: A lot to do! At high fluences charged hadrons are lethal for trapping Oxygen does not help when trapping is dominating Signal depends on Leff and on 1/F Very inspiring article by Kramberger et al. NIM A 511 (2003)82

  15. Forthcoming 3D tests: • ATLAS pixel compatible (radiation limit) • TOTEM 3 x 4 cm2 (pure 3D, planar with 3D edges) • Speed measurement with 0.13 µm CMOS • Radiation tests for active edge (planar/3D) IWORID 2004 C. Da Via Brunel University

  16. Atlas Upgrade Pixel Cell Design 3 Collection and 3 Field electrodes per Cell Depletion Distance Under 75 mm Electrode Area 6 % of Cell (improved etching may reduce this)

  17. 3D – TOTEM • Full size active edge sensor 3 x 4 cm2 • Forthcoming tests at X5 and SPS

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