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Summary of existing prototypes

Summary of existing prototypes. Summary of existing prototypes. AMS H35 HVPixel monolithic test detector – continuous readout with time measurement (one system available, chips: todo ) CCPD1 capacitive coupled pixel detector – continuous readout wtm

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Summary of existing prototypes

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  1. Summary of existing prototypes

  2. Summary of existing prototypes • AMS H35 • HVPixel monolithic test detector – continuous readout with time measurement • (one system available, chips: todo) • CCPD1 capacitive coupled pixel detector – continuous readout wtm • (one system available, chips: todo) • CAPSENSE/CAPPIX edgeless capacitive coupled pixel detector – continuous readout wtm • (one system available, chips: todo) • HVPixelMmonolithic test detector - rolling shutter RO • (one system available, chips: todo) • AMS H18 • MuPixelmonolithic test detector – continuous readout with time measurement • (one system available, chips: todo) • HV2FEI4 CCPD detector • (several systems available, chips: todo)

  3. Summary of existing prototypes Monolithic detector – continuous readout with time measurement HVPixel– CMOS in-pixel electronics with hit detection Binary RO Pixel size 55x55μm Noise 60e MIP seed pixel signal 1800 e Time resolution <100ns Monolithic detector - frame readout Capacitive coupled hybrid detector • HVPixelMchip - frame mode readout • Pixel size 21x21μm • 4 PMOS pixel electronics • 128 on-chip ADCs • Noise: 21e (lab) - 44e (test beam) • MIP signal - cluster: 2000e/seed: 1200e • Test beam: Detection efficiency >98% • Seed Pixel SNR ~ 27 • Cluster signal/seed pixel noise ~ 47 • Spatial resolution ~ 3 m CCPD1 - capacitive coupled pixel detector Pixel size 55x55μm Noise 70e Time resolution <100ns MIP SNR 25 CCPD2 (CAPPIX) - capacitive coupled pixel detector Pixel size 50x50μm Noise 30-40e Time resolution <300ns MIP SNR 45-60 Irradiations of test pixels 60MRad – MIP SNR 22 at 10C (CCPD1) 1015neq MIP SNR 50 at 10C (CCPD2) Technology 350nm HV – substrate 20 cm uniform

  4. HVPixel Monolithic matrix CCPD matrix (sensor) CCPD matrix (readout)

  5. CCPD1 Monolithic matrix CCPD matrix (sensor) wire bonds Electrodes chips Sensor pixels Chip A Signal transmission CCPD matrix (readout) Standard CCPD 55x70 µm pixel size Chip B Readout pixels

  6. CCPD1

  7. Edgeless CCPD (CAPSENSE/CAPPIX) Pixel matrix efficiency: Detection of signals > 350e possible MIP signal ~ 1800 e CAPPIX/CAPSENSE edgeless CCPD 50x50 µm pixel size

  8. HVPixelM Efficiency vs. the in-pixel position of the fitted hit. Efficiency at TB: ~98% (probably due to a rolling shutter effect) Seed pixel SNR 27, seed signal 1200e, cluster 2000e The type 1 chip HVPixelM: Simple (4T) integrating pixels with pulsed reset and rolling shutter RO 21x21 µm pixel size Spatial resolution 3-3.8µm

  9. Irradiation with protons at KIT (1015neq/cm2 and 300MRad) 55Fe 55Fe and 22Na spectrum, RMS noise Irradiated Temperature 10C RMS Noise 77 e SNR = 64 22Na 55Fe and 22Na spectrum, RMS noise Irradiated Temperature 20C RMS Noise 270 e SNR = 15 55Fe and 22Na spectrum, RMS noise Irradiated Temperature -10C RMS Noise 40 e SNR = 93

  10. Irradiation with x-rays (50 MRad) Noise After irradiation Temperature 5C Noise 83e Noise Before irradiation Room Temperature Noise 72e Noise at room Temperature Vs. annealing time

  11. MuPixel 92µm

  12. MuPixel (RO-cell) 46 µm TS DRAM Comparator Address ROM 7µm DAC and SRAM CMOS digital part Coupling capacitor

  13. MuPixel Threshold tune not optimal (changed in the new version)

  14. MuPixel test beam • Test-beam measurement February 2014 DESY • Performed by our colleagues from Institute for Physics

  15. MuPixel test beam • Test-beam measurement October 2013 DESY • Performed by our colleagues from Institute for Physics 80ns Probably caused by indirect hits

  16. HV2FEI4 • HV2FEI4 CCPD Pixels 2 2 3 3 1 1

  17. HV2FEI4 • Standard pixels • Pixel efficiency measurement • For every pixel efficiency and number of noise hits are measured • No noise hits observed • About 99% pixels detect signals of ~1025 -1125 e.

  18. HV2FEI4: segmented strip measurements • Analog encoding of pixels positions in the case of the segmented strip readout Fe55 Absorber Amp Oscilloscope Th1 Monitor Chip

  19. HV2FEI4: neutron irradiation 1015neq/cm2 • No evidence of signal decrease after 1015neq/cm2

  20. HV2FEI4: x-ray irradiation to 862 Mrad • CCPD2 implements three pixel types, fully rad hard, partially rad hard and a simple pixel that uses positive feedback and has a CMOS comparator • A detector has been irradiated to 862 Mrad with x-rays. (chips on during the irradiation, 2 hours of annealing at 70C after each 100Mrad) • Result for one partially rad hard pixel: input referred noise before irradiation 25mV (90 e) • Input referred noise after irradiation 40mV (150 e) at room temperature 862 Mrad 90e 150e

  21. HV2FEI4: test beam • Test beam Threshold tune not optimal (changed in the new version)

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