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Experiment. ZTO TFT, sol-gel on chip process. 1. Effect of tin precursor (300°C, wet annealing). 1) Tin isopropoxide. 2) Tin(IV) chloride. 3) Tin(IV) tert -butoxide. Mobility 0.014. Mobility 0.007. Result. 2. Effect of catalyst (acetic acid) 300°C, dry annealing. Acetic acid.
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Experiment ZTO TFT, sol-gel on chip process 1. Effect of tin precursor (300°C, wet annealing) 1) Tin isopropoxide 2) Tin(IV) chloride 3) Tin(IV) tert-butoxide Mobility 0.014 Mobility 0.007
Result 2. Effect of catalyst (acetic acid) 300°C, dry annealing Acetic acid 1) Tin isopropoxide 2) Tin(IV) chloride 3) Tin(IV) tert-butoxide
2. Effect of catalyst (acetic acid) Tin tert-butoxide + Acetic acid Direct gelation
Experiment 실험 상세
Precursor Tin isopropoxide Dry 1) Tin isopropoxide Acetic acid Wet
Precursor Tin(IV) chloride Dry 2) Tin(IV) chloride Acetic acid Wet
Precursor Tin tert-butoxide Dry 3) Tin(IV) tert-butoxide Acetic acid Wet